2010
DOI: 10.1016/j.solmat.2009.06.020
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High throughput via-metallization technique for multi-crystalline metal wrap through (MWT) silicon solar cells exceeding 16% efficiency

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Cited by 25 publications
(11 citation statements)
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“…A reliable and continuous via metallization is essential in terms of low series resistance contribution for achieving high fill factors [7]. For conventional p-type silicon MWT cell structures with aluminum back surface field (MWT-BSF, Fig.…”
Section: Introductionmentioning
confidence: 99%
“…A reliable and continuous via metallization is essential in terms of low series resistance contribution for achieving high fill factors [7]. For conventional p-type silicon MWT cell structures with aluminum back surface field (MWT-BSF, Fig.…”
Section: Introductionmentioning
confidence: 99%
“…MWT/EWT technology has been regarded as industrially promising recently because of its high cost-effectiveness for increasing cell and module efficiency [47,48]. In the MWT/EWT cells, the front metal grids or the front emitter will be wrapped through the laser opened viaholes to the rear side of the wafer inducing reduced shading losses, and reduced surface recombination, and as a result the cell efficiency will be improved [49].…”
Section: Cell Structure Innovation: Advanced Architecturesmentioning
confidence: 99%
“…In the following, modified rear side screen printing step, the n-contacts (busbars) and vias as well as the psoldering pads are metallized. This process is extended by a short suction step (≤ 1 second), to guarantee a reliable via metallization [5] with sufficiently low via resistances R via .≤ 8 mΩ (corresponds to a fill factor loss ≤ 0.1%abs.) [6].…”
Section: Experimental Approachmentioning
confidence: 99%