2003
DOI: 10.1002/marc.200300151
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High‐Throughput Chemical Vapor Deposition System and Thin‐Film Silicon Library

Abstract: Summary: Thin‐film Si materials library were fabricated rapidly on glass substrates using the combinatorial hot‐wire CVD technique. We found that the films with high hydrogen dilution become microcrystalline Si, and the films with no and low hydrogen dilution remain in the amorphous Si structure. We also found that the ratio of hydrogen to silane (R) is a good measure of the structure change.Schematics of a combinatorial HWCVD system.magnified imageSchematics of a combinatorial HWCVD system.

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Cited by 12 publications
(8 citation statements)
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“…2(a), uses chemical vapor deposition (CVD) to produce composition spreads by positioning the CVD precursor inlets close to the substrate and allowing diffusive, gas phase intermixing to create the composition gradient on the substrate in the region between the two sources. 19,20 The local film growth rate is dependent on the precursors, their flux to the substrate surface and the substrate temperature. This method is relatively simple and does allow codeposition of components for intimate mixing.…”
Section: Methods For Preparation Of Csafsmentioning
confidence: 99%
“…2(a), uses chemical vapor deposition (CVD) to produce composition spreads by positioning the CVD precursor inlets close to the substrate and allowing diffusive, gas phase intermixing to create the composition gradient on the substrate in the region between the two sources. 19,20 The local film growth rate is dependent on the precursors, their flux to the substrate surface and the substrate temperature. This method is relatively simple and does allow codeposition of components for intimate mixing.…”
Section: Methods For Preparation Of Csafsmentioning
confidence: 99%
“…However, that is not the intent of this report. Instead, we will describe our CSAF fabrication methods as an example and provide the following citations of papers describing the various other methods of CSAF fabrication 20–23,26,27,37–48…”
Section: Materials Libraries (Csafs)mentioning
confidence: 99%
“…For example, the CVD reactor design of Gladfelter [11,16] features three feed tubes in a triangular arrangement across the substrate; a different single-source precursor is fed through each tube, generating compositional spreads of three metal dioxides over the substrate. In Wang [13,14,15], thickness graded films of hydrogenated silicon were deposited in a hot-wire CVD system featuring a mask and motorized shutter; control of the shutter speed was used to create strips of graded films over the substrate. Hyett and Parkin [7] describe a crossflow reactor configuration where separate precursor inlet nozzles are used to produce films with composition gradients of tungsten and titanium oxides and to likewise generate films with varying ratios of TiO 2 rutile/anatase phases.…”
Section: Combinatorial Cvdmentioning
confidence: 99%