High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN; high threshold voltage; large gate swing; normally-off; specific on-resistance

Yong-bing, 赵勇兵 Zhao; Yun, 张韵 Zhang; Zhe, 程 哲 Cheng; Yu-liang, 黄宇亮 Huang; Lian, 张连 Zhang; Zhiqiang, 刘志强 Liu; Xiao-yan, 伊晓燕 Yi; Guo-hong, 王国宏 Wang; Jin-min, 李晋闽 Li

doi:10.3788/fgxb20163706.0720

发光学报

2016

DOI: 10.3788/fgxb20163706.0720

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High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN; high threshold voltage; large gate swing; normally-off; specific on-resistance

赵勇兵 Zhao Yong-bing¹,

张韵 Zhang Yun²,

程哲 Cheng Zhe³

et al.

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High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN; high threshold voltage; large gate swing; normally-off; specific on-resistance

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