2022
DOI: 10.1126/science.abn8997
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High thermoelectric performance realized through manipulating layered phonon-electron decoupling

Abstract: Thermoelectric materials allow for direct conversion between heat and electricity, offering the potential for power generation. The average dimensionless figure of merit ZT ave determines device efficiency. N-type tin selenide crystals exhibit outstanding three-dimensional charge and two-dimensional phonon transport along the out-of-plane direction, contributing to a high maximum figure of merit Z max of ~3.6 × 10 −3 … Show more

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Cited by 217 publications
(161 citation statements)
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“…The positive slope of the C −2 curves obtained at three different frequencies (0.5, 1, and 1.5 kHz) indicates a n‐type semiconducting characteristics of the SnSe NSs (Figure S6, Supporting Information), which may originate from the chlorination induced during the synthesis process, in agreement with previous reports using similar solution‐phase synthesis methods [ 41 ] and our recent work. [ 42 ] According to the intercept of the Mott–Schottky plots, the flat band potential ( E fb vs NHE) can be determined to be around −0.35 eV ( E fb vs NHE = E Ag/AgCl + 0.197 eV) for SnSe NSs. As a result, the conduction band minimum (CBM) edge was estimated at −0.45 eV (the CBM is usually about 0.1 eV negative than the E fb for n‐type semiconductor), which is more negative than the potential of H + /H 2 (0 eV) and thus favorable for H 2 evolution reaction via water splitting.…”
Section: Resultsmentioning
confidence: 99%
“…The positive slope of the C −2 curves obtained at three different frequencies (0.5, 1, and 1.5 kHz) indicates a n‐type semiconducting characteristics of the SnSe NSs (Figure S6, Supporting Information), which may originate from the chlorination induced during the synthesis process, in agreement with previous reports using similar solution‐phase synthesis methods [ 41 ] and our recent work. [ 42 ] According to the intercept of the Mott–Schottky plots, the flat band potential ( E fb vs NHE) can be determined to be around −0.35 eV ( E fb vs NHE = E Ag/AgCl + 0.197 eV) for SnSe NSs. As a result, the conduction band minimum (CBM) edge was estimated at −0.45 eV (the CBM is usually about 0.1 eV negative than the E fb for n‐type semiconductor), which is more negative than the potential of H + /H 2 (0 eV) and thus favorable for H 2 evolution reaction via water splitting.…”
Section: Resultsmentioning
confidence: 99%
“…At 600–800 K, SnSe has a continuous phase transition process from low-symmetry Pnma (L-Pnma) phase to high-symmetry Pnma (H-Pnma) phase, and then to high-temperature high-symmetry Cmcm phase. In addition to temperature, introducing stress into SnSe crystals by doping/solid solution can also adjust the symmetry of the crystal structure, thereby optimizing the thermoelectric properties of the material, as shown in Figure 4 ( Su et al, 2022 ).…”
Section: Adjustments Of Carrier Parameters To Improve Ztmentioning
confidence: 99%
“… 3D electron-2D phonon transport properties outside the n-type SnSe layer: Layered SnSe crystals use their layer structure to suppress (lattice vibration) phonon transport, but electrons different from phonons can tunnel through overlapping electron orbital transport ( Su et al, 2022 ). …”
Section: Adjustments Of Carrier Parameters To Improve Ztmentioning
confidence: 99%
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“…The group-IV monochalcogenides, such as SnSe, possess orthorhombic crystal structure 16,17 and have been predicted to be ferroelastic-ferroelectric multiferroics with spontaneous electric polarization and lattice strain 18,19 . Recently, the ferroelectricity has been experimentally validated in SnSe and SnS, respectively.…”
Section: Introductionmentioning
confidence: 99%