High thermoelectric performance in ZnSb-SnTe pseudo-binary materials

High thermoelectric performance in p-type ZnSb upon increasing Zn vacancies: an experimental and theoretical study

“…31 By adding 27.3% SnTe to (ZnSb) 72.7 , the transition temperature is lowered to 487 K, permitting an insulation-metal transition (IMT). Sn diffusion creates nanocrystallites, improving s and retaining the S, resulting in a high S 2 s of 3383 mW m −1 K −2 at 573 K. 32 At 13.3% Bi doping, Sb migration is inhibited, preventing hole formation and promoting Zn-Sb/Bi-Sb phases. This concentration signicantly improves S to −362.8 mV K −1 and an S 2 s of ∼3.5 mW m −1 K −2 at ∼793 K. 33 Due to measurement difficulty (out-of-plane direction), fabrication complexity (e.g., chemical vapor deposition, molecular beam epitaxy, and sputtering), interface degradation susceptibility, mechanical stress, uniformity and reliability over large areas, thin lm based thermoelectrics remains a challenging task in the thermoelectric community.…”

“…31 By adding 27.3% SnTe to (ZnSb) 72.7 , the transition temperature is lowered to 487 K, permitting an insulation–metal transition (IMT). Sn diffusion creates nano-crystallites, improving σ and retaining the S , resulting in a high S 2 σ of 3383 μW m −1 K −2 at 573 K. 32 At 13.3% Bi doping, Sb migration is inhibited, preventing hole formation and promoting Zn–Sb/Bi–Sb phases. This concentration significantly improves S to −362.8 μV K −1 and an S 2 σ of ∼3.5 mW m −1 K −2 at ∼793 K. 33 Due to measurement difficulty (out-of-plane direction), fabrication complexity ( e.g.…”

Dopability and Magnetic Properties of 3d Transition Metals in an Atomic-Thick SnTe (001) Monolayer

“…In specific, when an out-of-plane ferromagnetic order is introduced into a TCI film, the quantum anomalous Hall effect (QAHE) with a tunable large Chern number can be produced, distinguished from the case in topological insulator (TI) films with a Chern number of ±1/±2. , Multiferroicity can be expected otherwise in the ferroelectric SnTe film with the introduced magnetic order, which can greatly extend its potential applications. Moreover, the Sn-based alloys are also found to have improved thermoelectric (TE) properties upon transition metal (TM) addition. − Thus, much effort has been paid to introduce magnetism in SnTe films, either through magnetic doping of elements with unpaired electrons , or the magnetic proximity effect. , …”

Gallium-Doped Zinc Oxide Nanostructures for Tunable Transparent Thermoelectric Films

“…12 It had been proven that the introduction of structural defects can induce the phonon scattering by defects, nano-interfaces, nanostructure, and dislocations, 12−25,32−35 which can effectively reduce the κ of ZnO. 36,37 However, despite these approaches, it is still a huge challenge to simultaneously optimize the S, σ, and κ for a high power factor (PF) (PF = σS 2 ) and a high ZT with good stability at high temperature through tunable doping.…”

“…Nevertheless, ZnO thin films exhibited a much lower κ when compared to the bulk ZnO, whereby its κ value as low as 1.4 W m –1 K –1 could be achieved for sol–gel-grown ZnO thin film with a thickness of 80 nm and 1.8 W m –1 K –1 for dual Ga- and In-doped ZnO nanostructured thin films . It had been proven that the introduction of structural defects can induce the phonon scattering by defects, nano-interfaces, nanostructure, and dislocations, − ,− which can effectively reduce the κ of ZnO. , However, despite these approaches, it is still a huge challenge to simultaneously optimize the S , σ, and κ for a high power factor (PF) (PF = σ S 2 ) and a high ZT with good stability at high temperature through tunable doping.…”