High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

Capellini, Giovanni; Seta, M. De; Zaumseil, P.; Kozlowski, Grzegorz; Schroeder, Thomas

doi:10.1063/1.3702443

Cited by 67 publications

(54 citation statements)

References 14 publications

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“…Additionally, the CTE of Ge displays a difference to the value of bulk Ge according to Ref. 19 for T A > 300 • C. Since it was proven that the Ge buffer did not suffer further relaxation in the annealing process (see above), this indicates that the strain state of the Ge buffer is influenced by modifications in the GeSn layer above.…”

Section: -7mentioning

confidence: 73%

The thermal stability of epitaxial GeSn layers

et al. 2018

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We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.

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Section: -7mentioning

confidence: 73%

The thermal stability of epitaxial GeSn layers

et al. 2018

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“…Details of the complex temperature profile used to obtain the rest of the 1000-nm thick Ge layer can be found in Ref. 19.…”

Section: Methodsmentioning

confidence: 99%

X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates

Kopp

Kaganer

Capellini³

et al. 2012

Phys. Rev. B

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""We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe\\\/Ge\\\/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge\\\/Si interface, while a smaller tensile strain at the SiGe\\\/Ge interfaces released by uncorrelated\\\/little correlated 60 degrees dislocations."

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“…1 This strain value is much higher than the typical tensile strain value of 0.2% reported for Ge/Si. 2 This discrepancy is due unintentional omission of the Si offcut angle and azimuth angle (u) of the sample during high-resolution x-ray diffraction (HRXRD) measurement, and it has unfortunately resulted in a misleading result.…”

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confidence: 99%

Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Tan

Lee

Jandl

et al. 2013

Journal of Elec Materi

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In the original article we presented results that show that the strain in germanium (Ge) epitaxial films grown directly on a silicon (Si) (001) with 6°offcut has a tensile strain of 0.6%.1 This strain value is much higher than the typical tensile strain value of 0.2% reported for Ge/Si.2 This discrepancy is due unintentional omission of the Si offcut angle and azimuth angle (u) of the sample during high-resolution x-ray diffraction (HRXRD) measurement, and it has unfortunately resulted in a misleading result.The peak position in a standard 2h-x curve and its intensity strongly depend on the way the sample is placed during the HRXRD measurement, especially for the offcut sample.3 Figure 1 shows that the shift in the Ge peak position and its intensity variation is a function of the azimuth angle of sample (u) during the HRXRD measurement. The angular shift of Ge peak position, from one azimuthal orientation to another, can be as large as 0.6344°, and thus single azimuthal scan may be misinterpreted to indicate strain anywhere in the range of +0.75% (tensile) to À0.40% (compressive). In addition, the Ge peak intensity changes significantly by more than two orders of magnitude.In order to calculate the strain of Ge epitaxial film which is grown directly on the Si with offcut substrate (6°o ffcut in this case), an equation that has factored in the azimuth effect (u) is used. The angular separation between the epitaxial film and the substrate peak in the (004) rocking curve at an azimuth angle u, is given byDh B004 is the difference in Bragg angles between the epitaxial layer and the substrate. Du is the crystallographic tilt between the [001] axes of the epitaxial layer and the substrate. u 0 specifies the direction of this tilt.The points (pairs of the Ge peak position and its respective u) can be fitted by a linear equation (Fig. 2). The interception on the vertical axis and slope of the straight line represent Dh B004 and Du, respectively. The confidence level of the fit to our data set is 92.3 %. From the linear fitting, Dh B004 = 1.5203 and Du = 0.1658 are obtained. The out of plane lattice constant is then determined by the Bragg angle of the epitaxial layer.The online version of the original article can be found under

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High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

Cited by 67 publications

References 14 publications

The thermal stability of epitaxial GeSn layers

The thermal stability of epitaxial GeSn layers

X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates

Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

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