High-temperature Ultraviolet Photodetectors: A Review

Miller, Ruth A.; So, Hongyun; Heuser, Thomas A.; Senesky, Debbie G.

doi:10.48550/arxiv.1809.07396

Cited by 4 publications

(7 citation statements)

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“…Results in Table 2 reveal that 6-Fingers based (S = W) MSM structure shows the highest PDCDR and light current density values. Past research studies concluded that thermally stable contacts with low dark current are desirable for higher QE, PDCR, and responsivity (Miller et al, 2018). The least dark current density is observed for 5-Fingers based (S = 2W) design but with lower PDCDR.…”

Section: Resultsmentioning

confidence: 99%

“…Response time is another critical consideration in the performance of the device. Response time of PD (which is related to bandwidth) is quantified 10% to 90% as rising time and 90% to 10% as decay time of photocurrent (Miller et al, 2018). AlGaN MSM structures enable temporal response in ps (picosecond) with a very low dark current .…”

Section: Resultsmentioning

confidence: 99%

“…Recently efficient detection of UV light has become progressively more important in several areas, such as optical communication, UV emitter calibration, combustion monitoring, flame detection, astronomy, chemical analysis and a wide range of ground and space-based switching applications. GaN or AlGaN based semiconductors have attracted much attention for such applications due to high saturation velocity, high breakdown field and high-temperature tolerance (Miller et al, 2018).…”

Section: Introductionmentioning

confidence: 99%

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Investigating the effect of number of metal electrodes on performance parameters of AlGaN MSM photodetectors

Kaur

Hooda³

2022

International Journal on Smart Sensing and Intelligent Systems

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In most past studies, MSM (Metal–Semiconductor–Metal) detectors with the varying area have been investigated for varying number of fingers (metal electrodes) of equal width (W) and spacing (S). Therefore, there is a need to investigate fixed area MSM detectors with varying number of fingers as there are few reports on electrical analysis of larger electrode spacing dimensions. In the current work effect of variation in the number of fingers is studied for two types of Al0.5Ga0.5N/AlN/Sapphire based fixed area MSM detectors. Comparative performance analysis between (S = W) and (S = 2W) based detectors is carried out for photocurrent, dark current density and transient response. I–V characteristics, structure diagram plots are generated using the TCAD Silvaco simulator. It has been observed that S = W detectors exhibit higher photocurrent and lower dark current density is shown by S = 2W designs. Therefore, simulation outcomes can be beneficial for selecting suitable MSM detector for reliable, high-speed optical communication and switching applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigating the effect of number of metal electrodes on performance parameters of AlGaN MSM photodetectors

Kaur

Hooda³

2022

International Journal on Smart Sensing and Intelligent Systems

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“…However, they noted a slightly increased response time due to the decreasing hole/electron velocity with rising temperature. [27] Furthermore, Jain et al reported a reduction in responsivity at higher temperatures in honeycomb-like GaN nanostructures. [28] Li, et al reported a decrease in photocurrent and responsivity with rising temperature in the range from room temperature to 200 °C due to band gap shrinkage and lattice scattering.…”

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confidence: 99%

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.

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“…V detectors have widespread applications including flame sensing, 1) communication systems, 2) space research, 3) UV environmental monitoring and so forth. Recently, much research has been done on GaN-based UV detectors.…”

mentioning

confidence: 99%

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

Sun

Zhan

Liu

et al. 2019

Appl. Phys. Express

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This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 s by DC heating to 116 s by 50 Hz pulsed heating at the same power (280 mW). With the same pulse duty cycle and a 50 Hz pulsed heating frequency, a reduction of 30%-45% in decay time is measured compared to DC heating.

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High-temperature Ultraviolet Photodetectors: A Review

Cited by 4 publications

References 0 publications

Investigating the effect of number of metal electrodes on performance parameters of AlGaN MSM photodetectors

Investigating the effect of number of metal electrodes on performance parameters of AlGaN MSM photodetectors

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

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