High-temperature thin-film strain sensors with low temperature coefficient of resistance and high sensitivity via direct ink writing

Abstract

High-temperature thin-film strain sensors are advanced technological devices for monitoring stress and strain in extreme environments, but the coupling of temperature and strain at high temperature is a challenge for their use. Here, this issue is addressed by creating a composite ink that combines Pb2Ru2O6 and TiB2 using polysilazane (PSZ) as a binder. After direct writing and annealing the PSZ/Pb2Ru2O6/TiB2 film at 800 °C in air, the resulting thin film exhibits a low temperature coefficient of resistance (TCR) of only 281 ppm/°C over a wide temperature range from 100 °C to 700 °C, while also demonstrating high sensitivity with a gauge factor approaching 19.8. This exceptional performance is attributed to the intrinsic properties of Pb2Ru2O6, which has positive TCR at high temperature, and TiB2, which has negative TCR at high temperature. Combining these materials reduces the overall TCR of the film. Tests showed that the PSZ/Pb2Ru2O6/TiB2 film maintains stable strain responses and significant signal output even under varying temperature. These findings provide valuable insights for developing high-temperature strain sensors with low TCR and high sensitivity, highlighting their potential for applications in high-temperature strain measurements.