High-temperature thermoelectric properties of Cu1–xInTe2 with a chalcopyrite structure

Kosuga, Atsuko; Plirdpring, Theerayuth; Higashine, Ryosuke; Matsuzawa, Mie; Kurosaki, Ken; Yamanaka, Shinşuke

doi:10.1063/1.3678044

Cited by 78 publications

(66 citation statements)

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“…[ 16 ] Thus many efforts have been made theoretically and experimentally [17][18][19][20][21][22] to enhance its TE performance already, such as Cu defi ciency and cation substitution. However, since there are two cation sites (Cu and In) in CuInTe 2 , cation substitution often lacks specifi city and may generate both electron and hole simultaneously, making it diffi cult to enhance the electrical transport properties substantially.…”

mentioning

confidence: 99%

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Luo

Jiang

et al. 2016

Advanced Energy Materials

125

133

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In addition, it is of importance to note that a high power factor ( S 2 / ρ ) is also indispensable for a given TE material to maximize its output power. [ 3 ] Therefore, by taking account of the practical application, a simultaneously optimization in the electrical and thermal transport properties of TE materials is imperative to maximize the output power and conversion efficiency concurrently. Recently, some strategies have been proved to be effective and even high ZT values greater than 2.0 have been achieved in the Pb-based TE materials, [ 4,5 ] such as the band convergence, [ 6 ] electronic density of states (DOS) distortion, [ 7 ] carrier energy barrier fi ltering, [ 8 ] and the conduction (valence) band modifi cation [ 9 ] to enhance Seebeck coefficient for high power factor; while defect engineering, [ 10 ] nanostructuring, [ 11 ] and multiscale hierarchical architecturing [ 12 ] to enhance the scattering of phonons for low thermal conductivity. However, the environmentally hazardous Pb element prevents them from widespread application. Therefore, it is of signifi cance to develop eco-friendly TE materials for middle temperature application, such as Mg 2 Si, [ 13 ] Half-Heusler, [ 14 ] and BiCuSeO [ 15 ] based TE materials.More recently, chalcopyrite CuInTe 2 is being considered as a promising p-type TE material because of the merits of environmentally friendly chemical component, intrinsically high electrical conductivity, and high Seebeck coeffi cient owing to the degenerate energy bands near the valence band maximum (VBM). [ 16 ] Thus many efforts have been made theoretically and experimentally [17][18][19][20][21][22] to enhance its TE performance already, such as Cu defi ciency and cation substitution. However, since there are two cation sites (Cu and In) in CuInTe 2 , cation substitution often lacks specifi city and may generate both electron and hole simultaneously, making it diffi cult to enhance the electrical transport properties substantially. Besides, the less phonon scattering, mainly by point defects originated from chemical component regulation, rendering its thermal conductivity is still relatively high. It is well known that refi ning the microstructure into nanoscale is often effective in optimizing thermal transport properties, yet the electrical transport properties are usually deteriorated due to the inevitably scattering of carriers, as typical shown in the CuInTe 2 /graphene [ 23 ] and our

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confidence: 99%

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Luo

Jiang

et al. 2016

Advanced Energy Materials

125

133

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“…Recently, copper-based chalcogenide semiconductors have attracted much attention because of their relatively high carrier mobility (µ H ) and low κ, such as CuGa(In)Te 2 , Cu 2 CdSnX 4 (X = Se, S), Cu 2 SnSe 3 , and Cu 3 SbSe 4 [11][12][13][14]. Among these compounds, ternary Cu 3 SbSe 4 semiconductor has emerged as a promising thermoelectric material because of its narrow band gap and large carrier effective mass.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Zhao

2017

Energies

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“…2(a) r for pure CuGaTe 2 increases slightly with increasing temperature until T~500 K, and then decreases with further increasing the temperature (dr/dT < 0), indicating that CuGaTe 2 is a thermal activated semiconducting behavior [47]. However, the metal-like behavior (dr/dT > 0) in r(T) curves is found for doped compound CuGa 1Àx Gd x Te 2 /0.7 vol.%Te (x > 0).…”

Section: Resultsmentioning

confidence: 92%

Enhanced thermoelectric performance of CuGaTe2 by Gd-doping and Te incorporation

Zhang

Qin

et al. 2015

Intermetallics

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High-temperature thermoelectric properties of Cu_1–_xInTe₂ with a chalcopyrite structure

Cited by 78 publications

References 11 publications

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Enhanced thermoelectric performance of CuGaTe2 by Gd-doping and Te incorporation

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High-temperature thermoelectric properties of Cu1–xInTe2 with a chalcopyrite structure

Cited by 78 publications

References 11 publications

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe2 Thermoelectric Materials

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe2 Thermoelectric Materials

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Enhanced thermoelectric performance of CuGaTe2 by Gd-doping and Te incorporation

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High-temperature thermoelectric properties of Cu_1–_xInTe₂ with a chalcopyrite structure

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials

Progressive Regulation of Electrical and Thermal Transport Properties to High‐Performance CuInTe₂ Thermoelectric Materials