High Temperature Thermoelectric Device Concept Using Large Area PN Junctions

Chavez, Ruben; Angst, Sebastian; Hall, Joseph E.; Stoetzel, J.; Kessler, V.; Bitzer, L. A.; Maculewicz, Franziska; Benson, Niels; Wiggers, Hartmut; Wolf, Dietrich E.; Schierning, Gabi; Schmechel, Roland

doi:10.1007/s11664-014-3073-x

Cited by 39 publications

(21 citation statements)

References 21 publications

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“…We approach the new architecture by means of experiments and simulations. Our experimental realizations of the PNG were created in a bottom‐up approach from highly doped silicon . In a first step the raw material, highly porous nanopowder from the gas phase synthesis, is densified by CAPAD .…”

Section: Devicesmentioning

confidence: 99%

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Silicon‐based nanocomposites for thermoelectric application

Schierning

Stoetzel

Chavez

et al. 2016

Physica Status Solidi (a)

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Here we present the realization of efficient and sustainable silicon‐based thermoelectric materials from nanoparticles. We employ a gas phase synthesis for the nanoparticles which is capable of producing doped silicon (Si) nanoparticles, doped alloy nanoparticles of silicon and germanium (Ge), SixGe1–x, and doped composites of Si nanoparticles with embedded metal silicide precipitation phases. Hence, the so‐called “nanoparticle in alloy” approach, theoretically proposed in the literature, forms a guideline for the material development. For bulk samples, a current‐activated pressure‐assisted densification process of the nanoparticles was optimized in order to obtain the desired microstructure. For thin films, a laser annealing process was developed. Thermoelectric transport properties were characterized on nanocrystalline bulk samples and laser‐sintered‐thin films. Devices were produced from nanocrystalline bulk silicon in the form of p–n junction thermoelectric generators, and their electrical output data were measured up to hot side temperatures of 750 °C. In order to get a deeper insight into thermoelectric properties and structure forming processes, a 3D‐Onsager network model was developed. This model was extended further to study the p–n junction thermoelectric generator and understand the fundamental working principle of this novel device architecture. Gas phase synthesis of composite nanoparticles; nanocrystalline bulk with optimized composite microstructure; laser‐annealed thin film.

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Section: Devicesmentioning

confidence: 99%

“…A detailed presentation of the model can be found in Ref. . In the following we use constant transport parameters: σ = 10 5 S m −1 , κ = 2 W m −1 K −1 , and α = ±2 × 10 −4 V K −1 .…”

Section: Devicesmentioning

confidence: 99%

Silicon‐based nanocomposites for thermoelectric application

Schierning

Stoetzel

Chavez

et al. 2016

Physica Status Solidi (a)

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“…First proof‐of‐principle experiments on nanocrystalline silicon bulk samples with pn junction were done recently . The monolithic bulk samples with pn junction were prepared by a bottom‐up approach starting with nanopowder and directly sintering n‐type and p‐type nanopowders together.…”

Section: Device Concepts For Thermoelectric Heat‐to‐electricity Convementioning

confidence: 99%

“…Further, trap states within the band gap may have a positive effect since they increase the thermal generation rate effectively by reducing the band gap. First proof-of-principle experiments on nanocrystalline silicon bulk samples with pn junction were done recently [139][140][141]. The monolithic bulk samples with pn junction were prepared by a bottom-up approach starting with nanopowder and directly sintering n-type and p-type nanopowders together.…”

Section: Pn Junction Tegmentioning

confidence: 99%

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Silicon nanostructures for thermoelectric devices: A review of the current state of the art

Schierning

2014

Physica Status Solidi (a)

101

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Silicon is the most important element of modern semiconductor industry. As a thermoelectric converter material, it would be able to promote applications dramatically since device integration and scaling of the fabrication processes could be borrowed from existing technology. Though the thermoelectric performance of single crystalline silicon is only poor, silicon nanostructures have demonstrated a competitive figure of merit. To make use of these nanostructures, novel device architectures are necessary. This review provides an overview over the physical background of silicon as thermoelectric converter material as well as different nanostructures like nanowires, porous nanomeshes, and nanocrystalline bulk and their thermoelectric properties, focusing mostly on experimental data. Further, different thermoelectric converter device concepts including nanowire device concepts, pn junction thermoelectric generators and integrated spot coolers are discussed and their realization with silicon nanostructures briefly sketched. (a) Nanowires, porous nanomeshes and nanocrystalline bulk with promising thermoelectric material's figure of merit. (b) Innovative device concepts using nanowires or large area pn junctions for thermoelectric heat‐to‐electricity conversion.

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Thermoelectric Module of SiGe Bulk Alloys Forming p‐n Junction at the Hot Side

Fujimoto¹,

Nagase

Ohshima

et al. 2022

Adv Eng Mater

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Thermoelectric power generation is a potential technology for providing green energy. It is expected to be able to convert enormous amounts of waste heat to electrical energy. To realize this technology, further increases in conversion efficiency and durability are essential. In particular, durability is a critical issue, especially for harnessing high‐temperature heat sources. Thus, a thermoelectric module of SiGe is fabricated without electrodes at the hot side, which is the main cause of aging. Electronic conduction between p‐ and n‐type elements is alternatively introduced using a direct connection, forming a p‐n junction. Sufficiently low electrical contact resistances are achieved at the p‐n junction above 300 °C due to the dissipation of the depletion layer. The conversion efficiency is 2.0% with a hot‐side temperature of 700 °C. The power‐generation performance is constant during heat‐run tests conducted at 700 and 500 °C under vacuum and air, respectively, for more than 450 h. The results demonstrate that a stable power‐generation technology using a thermoelectric module at high temperatures is established successfully.

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High Temperature Thermoelectric Device Concept Using Large Area PN Junctions

Cited by 39 publications

References 21 publications

Silicon‐based nanocomposites for thermoelectric application

Silicon‐based nanocomposites for thermoelectric application

Silicon nanostructures for thermoelectric devices: A review of the current state of the art

Thermoelectric Module of SiGe Bulk Alloys Forming p‐n Junction at the Hot Side

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