High temperature thermal properties of thin tantalum nitride films

Interfaces dominate heat conduction in nanostructured systems, and much work has focused on methods to enhance interfacial conduction. These approaches generally address planar interfaces, where the heat flux vector is everywhere normal to the interface. Here, we explore a nanostructured interface geometry that uses nonplanar features to enhance the effective interfacial conductance beyond what is possible with planar interfaces. This interface consists of interdigitating Al pillars embedded within SiO 2 with characteristic feature size ranging from 100 nm to 800 nm. The total sidewall surface area is modulated to highlight the impact of this additional channel by changing the pillar-to-pillar pitch ! between 1.6 µm and 200 nm while maintaining the same Al:SiO 2 fill fraction. Using optical pump-probe thermoreflectance measurements, we show that the effective conductance of a ~65 nm thick fin layer monotonically increases with decreasing ! , and that the conductance for ! = 200 nm is more than twice the prediction for a layered stack with the same volume ratio and a planar interface. Through a combination of Boltzmann transport modeling and finite element calculations, we explore the impact of the pitch ! and the pillar aspect ratio on effective thermal conductance. This analysis suggests that the concept of nanostructured interfaces can be extended to interfaces between diffusive and quasi-ballistic media in highly scaled devices. Our work proposes that the controlled texturing of interfaces can facilitate interfacial conduction beyond the planar interface regime, opening new avenues for thermal management at the nanoscale.

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“…however, the value is still within the typical range for many metal-dielectric interfaces [9,[47][48][49].…”

Section: Thermal Conduction Mechanisms In Nanostructured Interfacesmentioning

confidence: 92%

Enhanced Thermal Conduction Through Nanostructured Interfaces

Park

Sood

Park

et al. 2017

Nanoscale and Microscale Thermophysical Engineering

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“…A promising material in this point of view is amorphous tantalum nitride (a-TaN x ). Tantalum nitride is proved to be a mechanically hard and a chemically inert material, combining both high thermal stability and low temperature coefficient of resistance [17,18]. TaN x appears with many crystalline phases that are well studied [19,20].…”

Section: Introductionmentioning

confidence: 99%

Charge transport mechanisms and memory effects in amorphous TaN x thin films

Spyropoulos-Antonakakis

Sarantopoulou

Dražić

et al. 2013

Nanoscale Res Lett

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Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostructure may differ greatly. In this work, the bulk and surface local charge carrier transport properties of a-TaNx amorphous thin films deposited in two different substrates are investigated by conductive atomic force microscopy. The nitride films are grown either on Au (100) or Si [100] substrates by pulsed laser deposition at 157 nm in nitrogen environment. For the a-TaNx films deposited on Au, it is found that they display a negligible leakage current until a high bias voltage is reached. On the contrary, a much lower threshold voltage for the leakage current and a lower total resistance is observed for the a-TaNx film deposited on the Si substrate. Furthermore, I-V characteristics of the a-TaNx film deposited on Au show significant hysteresis effects for both polarities of bias voltage, while for the film deposited on Si hysteresis, effects appear only for positive bias voltage, suggesting that with the usage of the appropriate substrate, the a-TaNx nanodomains may have potential use as charge memory devices.

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“…Au, W, Ta, and TaN are common absorber film selections. 15,16 TaN offers low stress, 16 an amorphous/poly-crystalline structure, [16][17][18] and good absorption properties in EUV. 16 The complete mirror structure is more complex-and therefore poses greater challenges for minimizing the uncertainty-than many structures measured using both picosecond TDTR and the 3x method.…”

Section: Sample Designmentioning

confidence: 99%

“…Although TEM images and nanobeam diffraction data show the morphology of the films to be the same, electrical measurements demonstrated thickness-dependent electrical resistivity. 18…”

Section: B Single Film Tanmentioning

confidence: 99%

Thermal conduction properties of Mo/Si multilayers for extreme ultraviolet optics

Bozorg-Grayeli

Asheghi

et al. 2012

Journal of Applied Physics

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Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films J. Appl. Phys. 112, 074113 (2012) In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard xray photoelectron spectroscopy Appl. Phys. Lett. 101, 143501 (2012) Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film J. Appl. Phys. 112, 073101 (2012) Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface Appl. Phys. Lett. 101, 133506 (2012) Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices Extreme ultraviolet (EUV) lithography requires nanostructured optical components, whose reliability can be influenced by radiation absorption and thermal conduction. Thermal conduction analysis is complicated by sub-continuum electron and phonon transport and the lack of thermal property data. This paper measures and interprets thermal property data, and their evolution due to heating exposure, for Mo/Si EUV mirrors with 6.9 nm period and Mo/Si thickness ratios of 0.4/0.6 and 0.6/0.4. We use time-domain thermoreflectance and the 3x method to estimate the thermal resistance between the Ru capping layer and the Mo/Si multilayers (R Ru-Mo/Si ¼ 1.5 m 2 K GW À1 ), as well as the out-of-plane thermal conductivity (k Mo/Si 1.1 W m À1 K À1 ) and thermal anisotropy (g ¼ 13). This work also reports the impact of annealing on thermal conduction in a co-deposited MoSi 2 layer, increasing the thermal conductivity from 1.7 W m À1 K À1 in the amorphous phase to 2.8 W m À1 K À1 in the crystalline phase. V C 2012 American Institute of Physics. [http://dx.

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High temperature thermal properties of thin tantalum nitride films

Cited by 37 publications

References 14 publications

Enhanced Thermal Conduction Through Nanostructured Interfaces

Enhanced Thermal Conduction Through Nanostructured Interfaces

Charge transport mechanisms and memory effects in amorphous TaN x thin films

Thermal conduction properties of Mo/Si multilayers for extreme ultraviolet optics

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