2013
DOI: 10.3788/hplpb2013250s.0158
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High-temperature thermal cleaning for GaAs photocathode

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“…During the heating removal process, the temperature distribution on the GaAs photocathode is derived with the ANSYS program. The QE distribution of the GaAs photocathode fabricated is relevant with the temperature distribution in the reference [63]. The HV DC gun (500 kV) is the key element of the THz-FEL facility at CAEP.…”
Section: Gaas Photocathodementioning
confidence: 99%
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“…During the heating removal process, the temperature distribution on the GaAs photocathode is derived with the ANSYS program. The QE distribution of the GaAs photocathode fabricated is relevant with the temperature distribution in the reference [63]. The HV DC gun (500 kV) is the key element of the THz-FEL facility at CAEP.…”
Section: Gaas Photocathodementioning
confidence: 99%
“…(1) The GaAs substrate is cleaned by high temperature heating [63] to remove the residual oxygen and other impurity on the surface of the GaAs sample. The time for the high temperature cleaning is about 45 min.…”
Section: Gaas Photocathodementioning
confidence: 99%