2021
DOI: 10.1016/j.diamond.2021.108647
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High temperature surface graphitization of CVD diamond films and analysis of the kinetics mechanism

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Cited by 14 publications
(4 citation statements)
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“…1a ). The composite phase structure and the corresponding stress fields could be the primary factor responsible for the enhancement of the diamond high-temperature oxidation resistance 24 , 37 , 38 .
Fig.
…”
Section: Resultsmentioning
confidence: 99%
“…1a ). The composite phase structure and the corresponding stress fields could be the primary factor responsible for the enhancement of the diamond high-temperature oxidation resistance 24 , 37 , 38 .
Fig.
…”
Section: Resultsmentioning
confidence: 99%
“…Under short-pulse laser irradiation, the diamond temperature rises sharply, making the C-C covalent bond broken and reconnected; three of the four outer valence electrons of each carbon atom 2 s, 2 px, 2 py in the form of sp2 hybridized orbitals in the same plane through the σ-bonding with three carbon atoms form a covalent single bond, with the orbitals between the central axis of the 120 • angle. The other 2 pz orbital electrons that are not involved in the hybridization are perpendicular to this plane and form unsaturated π-bonds in the pπ orbitals [26], as the diamond-graphitization transition occurs.…”
Section: Changes In the Properties Of Photoinduced Diamondmentioning
confidence: 99%
“…[70][71][72][73] Hydrogen terminated sp 3 material present within grain boundaries is believed to form long-chain hydrocarbon polymers at 1800 to 2000 K, before C-H bond rupturing facilitates transformation to highly compressed sp 2 hybridized amorphous carbon, turbostratic carbon, and nanocrystalline graphite at 2100 K. [71][72][73][74] Concurrent graphitization, albeit to a lesser extent than that within grain boundaries, has meanwhile been shown to occur atop crystallite surfaces upon exceeding a temperature of 1700 K, with differing mechanisms either side of the Debye temperature of diamond due to differences in the excited lattice vibration modes; below 2021 K transformation occurs via the breaking of single C-C bonds, while beyond this point conversion is the result of rupturing of multiple C-C bonds, with a corresponding 2.4 fold increase in the associated activation energy. [75,76] As temperatures surpass 2200 K the graphitization process continues until the initial grain boundary is completely filled with more ordered material, before rapid transformation of grain cores from surrounding grain boundaries and crystallite surfaces. For ≈5 nm diameter dispersed nano-diamond particles in which the surface to volume ratio is greatly increased, lower activation energies result in the onset of this graphitization occurring at temperatures as low as 900 K. [63,77]…”
Section: Raman Spectroscopymentioning
confidence: 99%