High temperature superconducting films by RF magnetron sputtering

Kadin, Alan M.; Ballentine, P. H.; Argana, J.; Rath, R. C.

doi:10.1109/20.92799

Cited by 26 publications

(3 citation statements)

References 17 publications

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“…6 Further improvements in superconducting properties were obtained by placing a grounded shield within the dark space above the target center. target.…”

Section: Resultsmentioning

confidence: 99%

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Large-area sputtering of i n s i t u superconducting YBa2Cu3O7 films

Ballentine¹,

Allen²,

Kadin

et al. 1991

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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High-temperature superconducting thin films of YBa 2 eU 3 0 7 are deposited on 2 in. MgO and LaAI.0 3 substrates by radio frequency magnetron sputtering from an 8 in. diam powder target. By ~ocatl~g t~,e substrate above the center of the magnetron erosion ring and by placing a "negative IOn ~hleld between the target and the substrate, negative ion res puttering is avoided and high qualIty films are grown in situ, and are superconducting on removal from the vacuum chamber without a high-temperature post anneal. Stoichiometric films on LaAI0 3 and MgO have critical te~peratures up to 88 ~ and critical currents above 5 X 10 5 A/cm 2 at 77 K. Uniformity in thickness of ± 5%, and In room temperature resistivity of ± 7% were measured on 2 in. diam substrates. Microwave surface resistance measurements at 1.2 GHz and 4.2 K showed Rs zO.1 mn for YBCO ground planes and zO.3 mn for patterned YBCO strip lines on MgO.

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“…6 Further improvements in superconducting properties were obtained by placing a grounded shield within the dark space above the target center. target.…”

Section: Resultsmentioning

confidence: 99%

“…6 A schematic of the sputtering geometry in our CVC SC-4000 system is shown in Fig. 6 A schematic of the sputtering geometry in our CVC SC-4000 system is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Large-area sputtering of i n s i t u superconducting YBa2Cu3O7 films

Ballentine¹,

Allen²,

Kadin

et al. 1991

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…In preparing oxide thin-films, in particular, the negative particles: i.e. 0 ions and y-electrons sputtered and emitted from the targets, respectively, are accelerated by the sheath potential applied between the target(s) and the plasma, promoting further damages in the depositing films [1][2][3][4][5]. To solve such problems, separation of the sputtering plasma from the substrate is indispensable.…”

Section: Introductionmentioning

confidence: 99%

Preparation of thin-film oxide superconductor, Y1Ba2Cu3O7-delta by facing-targets sputtering deposition

Takagi

1990

SPIE Proceedings

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Thin-film oxide superconductor, Y1B a2Cu307.ö was prepared onto singlecrystal MgO (100) substrates by facing-targets sputtering (FTS) deposition technique. Throughout the various preparation conditions, little deviation of the compositional ratios of the metallic elements in the as-prepared films from those of the targets: i.e. Y:Ba:Cu = 1 :2:3 was observed. The atomic structures and properties of superconductivity of the as-prepared films largely depended on the substrate temperature, T. They were classified as the following five regions.Region I: 720 °C > T > 670°C. The films had c-axis oriented Y1Ba2Cu3O7 structure having T0 > 70 K.Region II: 670 °C > T5 > 630°C and 770 °C > Ts > 720°C. The polycrystalline Y1Ba2Cu3O7 having T0 -40 K was observed.Region III: 800 °C > T > 770°C and 530°C > T > 400°C. A different crystalline structure having ca. 1/3 periodicities of the c-axis length of Y 1B a2Cu307.8 appeared. It had semiconductor-like temperature dependence of the electric resistivity.III. The polycrystalline Y1 B a2 C u 0 and the "1/3 periodicity" structures coexisted.Region V: 400 °C > T > R.T. The films were amorphous and electrically insulating.The dependence of the structure on T will be explained by two factors which govern the crystal growth process: One is the surface mobility of the depositing atoms on the surface of the films; the other, configurational entropy of each crystal structure grown in the films. 16 / SPIE Vol. 1287 High T Superconductivity: Thin Films andApplications (1990) Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/25/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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