High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C

Abstract

We developed a solution growth process related to the combination of the Vertical Bridgman and Vertical Gradient Freeze in a metal free Si-C melt at growth temperatures of 2300 °C. For this procedure we present a detailed description of the growth process and discuss the influence of different growth parameters on the surface morphology and growth rate. So far, we managed to grow SiC layers with a thickness up to 300 μm. The characterization of the crystal morphology was carried out using SEM images and the metal concentration was estimated using SIMS.

Review of SiC crystal growth technology

“…This may alter the electronic properties of the semiconductor substrate. Recently the application of the vertical Bridgman (VB)/vertical gradient freeze (VGF) method using a metal free silicon-carbon solution at temperatures as high as 2300 °C was reported by the author's team [45,46].…”

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

“…In general, during solution growth of SiC, metal additives are incorporated up to their solubility limit into the SiC crystal, which may alter the electronic properties of the semiconductor substrate. Recently it was reported from the author's team that the vertical Bridgman / vertical gradient freeze method can be applied at temperatures as high as 2300 °C using a metal free silicon‐carbon solution of very high purity to perform SiC solution growth . This growth configuration could solve the current challenge of unintentional doping of the SiC crystal by the metal additives during solution growth based on the Czochralski‐like process.…”