High-Temperature Self-Supplied Isolated Driver Module for GaN Power Transistors

Abstract

In this paper, a compact isolated and self-supplied single channel driver module for operation at 200C (392F) is presented. It is aimed to drive a normally-on GaN device within a high voltage half bridge topology. The driver is implemented on a compact hybrid module. Two of such modules are then assembled on a dedicated half-bridge DBC with two GaN devices.