High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor

Pang, Lisa Y.S.; Chan, Simon; Johnston, Colin; Chalker, Paul R.; Jackman, Richard B.

doi:10.1016/s0925-9635(96)00756-x

Cited by 15 publications

(7 citation statements)

References 15 publications

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“…Indeed, boron concentrations near or in excess of a few 10 16 cm -3 are expected to strongly decrease the diffusion length of the free excitons since excitons bound on neutral boron atoms are more and more probable, with interatomic distances between boron atoms much less than 1 µm. The simulation turns out not to be sufficiently accurate for assessing the first term IPEIV, which will be considered as negligible in equation (1). The intensities of the A band and of the set of the H3 lines, the main ones after the exciton lines in the spectra of Fig.…”

Section: Analysis Of the Light Emission Location In A Bevelled Layer mentioning

confidence: 99%

“…Diamond, thanks to its overwhelming electrical, mechanical and chemical properties, offers important perspectives for electrical [1][2][3][4] and optical [5][6][7] applications. Meanwhile, some features such as the non uniform film thickness or surface roughness obtained after crystal growth by chemical vapour deposition (CVD) are limiting factors for these applications.…”

Section: Introductionmentioning

confidence: 99%

“…Then, the diamond substrates and films have to be polished. For several years, a huge number of polishing techniques applied to diamond has been developed: mechanical lapping [1], chemically assisted mechanical polishing [2], thermo-chemical polishing [3], laser and ion beam polishing [4,5]. The use of the chemically assisted mechanical polishing process, also known as "scaife polishing", creates on the diamond surfaces a lot of oriented striations 10 to 15 nanometres deep, which can be clearly detected by Nomarski analysis or AFM measurements.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

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Several 65 µm thick epitaxial diamond films prepared on (100) Ib substrates by high power, pulsed microwave plasma assisted chemical vapour deposition (HP-PMPCVD) are studied as a function of surface treatments by cathodoluminescence (CL) and photoluminescence (PL) spectroscopies. They are either as-grown, or polished, or etched by a microwave oxygen plasma, or after applying subsequently the two last processes. In CL spectra, bands due to defects occur at 2.3 eV, 3.07 eV, 3.6 eV and 4.7 eV, the last one being specific of polished surfaces, with nearly no contrast in the luminescence image, contrary to other CL images. A fundamental result consists in demonstrating that the defects induced by polishing can be removed by oxygen plasma etching. Additionally, in order to assess how luminescence spectra originate from a peculiar depth or not, a bevelled sample is studied. PL spectra are acquired on the sample side while CL spectra are measured at several points on the bevel top side till to the Ib substrate. Comparison of the two sets of result show that the H3 signal originates from the Ib substrate even if it is present in the CL spectra of the film. An analysis of the change in the intensity of the TO free exciton line, defect bands and H3 signal, along decreasing photon energies, as a function of the thickness of the remaining HP-PMPCVD film, is performed with the help of a model taking the diffusion of the unrecombined excitonic pairs and the re-excited photoluminescence into account. CL images recorded at specific wavelengths, which do not show inverted contrast, are also assessed. From these data, the exciton diffusion length is evaluated to 11 µm in the major part of the epitaxial layer except for the first 20 µm close to the Ib substrate where it decreases down to 2 µm. This study sheds light on the interpretation of luminescence spectra excited by an electron beam in undoped diamond layers. Defects bands due to damages induced by polishing and etching processes are also documented.

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Section: Analysis Of the Light Emission Location In A Bevelled Layer mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

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“…The high-temperature performance was limited by leakage through the Si0 2 gate oxide. Recently, Pang et al 147,148 reported the use of intrinsic diamond (i-D) as a gate material to replace the Si0 2 gate oxide, thereby reducing the gate leakage of peD MISFETs by lowering the interfacial trap density. Improved device performance was observed in terms of a low leakage current when operating at 300°C and complete channel current pinch-off and modulation.…”

Section: A Boron-doped Channel Diamond-based Fetsmentioning

confidence: 99%

“…Steady advances in PECVD have resulted in the realization of high-quality, polycrystalline diamond films for device applications. Thus, diamond-based microelectronic devices, such as Schottky diodes and FETs, 138,147,148,192 have been fabricated for high-temperature (T>500°C) applications. Likewise, microelectronic gas sensors based on CVD diamond can operate at considerably higher temperatures with a wider dynamic range and more sensitivity than those based on silicon technology.…”

Section: Diamond Chemical Gas Sensorsmentioning

confidence: 99%

A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications

Railkar

Kang

Windischmann³

et al. 2000

Critical Reviews in Solid State and Materials Sciences

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Effect of ECR etching conditions of (100)Ib diamond substrates on homoepitaxial low boron doped diamond layer quality

Volpe

Muret

Omnès

2008

Physica Status Solidi (a)

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6 pagesInternational audienceThe effect of oxygen electron cyclotron resonance (ECR) microwave plasma etching on the crystallinity of low boron doped thin diamond films grown on Ib (100)-oriented diamond substrates by MPCVD has been investigated with respect to the main experimental conditions: microwave power and O2 pressure at a constant DC bias. The substrates were exposed to ECR oxygen plasma to remove from 0.8 μm to 3.5 μm (depending on the value of the microwave power). The optimization of these two parameters has been performed in order to get the lowest surfaces roughness. This study aims also at demonstrating that oxygen ECR plasma etching is a powerful tool to remove surface and subsurface defects of diamond substrates as polishing grooves, subsurface damaged zone (polishing process induced defects) and various substrate roughness according to the observed growth sector. Low boron doped layers ([acceptors] = 4 × 1016 atoms/cm3) were grown by MPCVD on either O2 ECR plasma etched or merely chemically prepared (100) Ib diamond substrates. Cathodoluminescence analysis showed, for specific substrate etching conditions, a decrease of the band A emission (2.8 eV) in a low boron doped layer deposited on an etched substrate compared to a layer grown on a chemically prepared one. The FWHM of the FETO excitonic line of all theses layers is comprised between 16 meV and 13 meV for the best ones at 5 K. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor

Cited by 15 publications

References 15 publications

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications

Effect of ECR etching conditions of (100)Ib diamond substrates on homoepitaxial low boron doped diamond layer quality

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