2004
DOI: 10.1016/j.msea.2003.07.006
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High temperature plastic deformation of aluminium nitride with a lower-oxygen content

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Cited by 7 publications
(5 citation statements)
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“…AlN films have received considerable interest as promising candidates in electronic materials for thermal dissipation, dielectric and passivation layers [5]. The performance of AlN films as metallization and wear resistant coatings is considerably influenced by their microstructure and surface morphology [6]. Other microstructure factors such as grain size, interface and oxygen contamination can influence their heat transport and optical properties [7].…”
Section: Introductionmentioning
confidence: 99%
“…AlN films have received considerable interest as promising candidates in electronic materials for thermal dissipation, dielectric and passivation layers [5]. The performance of AlN films as metallization and wear resistant coatings is considerably influenced by their microstructure and surface morphology [6]. Other microstructure factors such as grain size, interface and oxygen contamination can influence their heat transport and optical properties [7].…”
Section: Introductionmentioning
confidence: 99%
“…1 Accordingly, the preparation of bulk AlN has been intensively investigated during the last decades in order to use as refractories. 1 However, the covalent bonding between Al and N makes the sintering of AlN difficult without the application of sintering additives.…”
Section: Introductionmentioning
confidence: 99%
“…1 Accordingly, the preparation of bulk AlN has been intensively investigated during the last decades in order to use as refractories. 1 However, the covalent bonding between Al and N makes the sintering of AlN difficult without the application of sintering additives. 2 Consequently, additives such as Li 2 O, CaO, MgO, MgO-SiO 2 , SiO 2 , B 2 O 3 , NiO, Cr 2 O 3 , Y 2 O 3 , CaF 2 and Ni have been used in order to promote the densification of AlN.…”
Section: Introductionmentioning
confidence: 99%
“…Embora haja interesse por materiais com boa confiabilidade mecânica para a fabricação de dispositivos eletrônicos de alta potência, os estudos sobre a cerâmica de AlN, por décadas, limitaram-se apenas a otimização de l, postergando ou desconsiderando a otimização de outras propriedades, que também são relevantes para a fabricação destes dispositivos. Além da aplicação em microeletrônica, a cerâmica de AlN foi cogitada como material estrutural para aplicações em baixa e alta temperatura [89][90][91], mas o estudo sobre o comportamento mecânico do AlN é limitado em comparação com outras cerâmicas estruturais (Al 2 O 3 , SiC e Si 3 N 4 ) [92]. Há controvérsias em relação à aplicação do AlN como material estrutural, sendo observados os seguintes relatos: i) o AlN tem limitada aplicação devido à sua inerente fragilidade, bem como baixa resistência mecânica comparada com outras cerâmicas estruturais (Si 3 N 4 e ZrO 2 ) [93]; ii) apesar das boas propriedades mecânicas, o AlN tem limitada aplicação devido ao alto custo de produção [14].…”
Section: Propriedades Mecânicas Do Nitreto De Alumíniounclassified