High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

Sreenivasan, R.; Sugawara, Takeshi; Saraswat, Krishna C.; McIntyre, Paul C.

doi:10.1063/1.2643085

Cited by 36 publications

(30 citation statements)

References 11 publications

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“…[6] For the sample c, the Ta4f 7/2 component position was found at 24.8 eV that is compatible with Ta 3 N 5 phase. [9,10] This assignment is in agreement with the resistivity data reported in Table 1. In fact, Ta 3 N 5 phase is characterised by high electrical resistivity.…”

Section: Resultssupporting

confidence: 82%

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Scandurra

Indelli

Pignataro

et al. 2008

Surface & Interface Analysis

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This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100• C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5 : 1, 2 : 1 and 1 : 1 Ar : N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed an increase in resistivity ongoing from the Ta 2 N phase to the Ta 3 N 5 one. The electrical properties of these films are comparable to those obtained by high temperature deposition process already reported in literature. Furthermore, a roughness and grain size modulation of the above films can be obtained by applying an RF negative bias during deposition without affecting the electrical resistivity.

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Section: Resultssupporting

confidence: 82%

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Scandurra

Indelli

Pignataro

et al. 2008

Surface & Interface Analysis

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“…42 For several thermal ALD processes of Ta 3 N 5 films reported in the literature, the amorphous crystal structure was also observed. 4,9,20,43 It is obvious from aforementioned results that ͑a small fraction of͒ N-containing plasmas FIG. 6.…”

Section: Influence Of the Plasma Gas Compositionmentioning

confidence: 99%

“…15 Sreenivasan et al reported the deposition of Ta 3 N 5 using an amido-based Ta precursor and a H 2 -N 2 plasma and they showed that the conductive cubic TaN x phase could be obtained from this material by a postdeposition thermal anneal at 850°C. 20 From the aforementioned results it is clear that plasma-assisted ALD can yield different TaN x compositions which are determined by the plasma conditions and gas mixtures used. Plasmaassisted ALD provides therefore additional freedom to tailor the deposition process and the resulting TaN x film properties to order.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Langereis

Knoops

Mackus

et al. 2007

Journal of Applied Physics

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Remote plasma atomic layer deposition (ALD) of TaNx films from Ta[N(CH3)2]5 and H2, H2-N2, and NH3 plasmas is reported. From film analysis by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, atomic composition, mass density, TaNx microstructure, and resistivity are presented for films deposited at substrate temperatures between 150 and 250°C. It is established that cubic TaNx films with a high mass density (12.1gcm−3) and low electrical resistivity (380μΩcm) can be deposited using a H2 plasma with the density and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. It is demonstrated that the different TaNx phases can be distinguished in situ by spectroscopic ellipsometry on the basis of their dielectric function with the magnitude of the Drude absorption yielding information on the resistivity of the films. In addition, the saturation of the ALD surface reactions can be determined by monitoring the plasma emission, as revealed by optical emission spectroscopy.

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“…In the recent years, OES has been employed for this purpose in plasma-assisted ALD processes by several authors. [12][13][14][15][16][17] OES can, however, not only be used to study the ͑electronically excited͒ species delivered to the surface during the plasma half-reaction, OES can also provide information on the precursor half-reaction and the overall process performance. The aim of this note is to show that OES is a versatile technique to study, optimize, and monitor plasma-assisted ALD processes.…”

Section: Introductionmentioning

confidence: 99%

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

Mackus¹,

Heil²,

Langereis³

et al. 2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes In this note it is demonstrated that optical emission spectroscopy ͑OES͒ is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition ͑ALD͒. The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.

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High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

Cited by 36 publications

References 11 publications

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

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