High-temperature persistent spectral hole burning of Eu^3+ ions in silicate glasses: new room-temperature hole-burning materials

Fujita, Koji; Tanaka, Katsuhisa; Hirao, Kazuyuki; Soga, Naohiro

doi:10.1364/josab.15.002700

Cited by 41 publications

(32 citation statements)

References 26 publications

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“…As shown in Figure 2, we observe a global decrease for this area, indicating that photoinduced rearrangement of the host local structure is not the unique or dominant mechanism in the case of Eu 3+ . A similar conclusion was drawn in [16].…”

Section: Burning and Refilling Kinetics Pshb Mechanismssupporting

confidence: 85%

“…Room-temperature PSHB in the AlSi matrix using a CW laser then seems possible. We observe however that, in the measurements performed using a CW laser, the burning intensity was higher in this last host [14] than in sodium aluminosilicate [15] or sodium silicate [16] glass.…”

Section: Discussionmentioning

confidence: 53%

“…PSHB up to 77 K was observed for this ion doped in an aluminosilicate (AlSi) glass prepared in the conventional way [14]. More recently, PSHB at room temperature was reported for the same ion doped in a sodium aluminosilicate glass [15], then in a sodium silicate glass [16] also prepared in the conventional way. In the meantime, PSHB in the Eu 3+ ion had been observed up to 200 K in an AlSi glass prepared using the sol-gel technique [17].…”

mentioning

confidence: 76%

“…Room-temperature PSHB has been observed for the Eu 3+ ion in a sodium aluminosilicate glass [15] and in a sodium silicate glass [16]. In both cases, holes were burned using a continuous-wave (CW) laser.…”

Section: Discussionmentioning

confidence: 99%

“…In the fit, we used the value 33 for ln(R 0 t) for both contributions. To date, two mechanisms have been suggested to explain PSHB above 4 K in Eu 3+ -doped glasses: photoinduced rearrangement of the local structure of the host [17,21] as already mentioned and photoinduced reduction of Eu 3+ to Eu 2+ [15,16]. Photoinduced reduction of Sm 3+ to Sm 2+ has recently been observed in a sodium aluminosilicate glass [22].…”

Section: Burning and Refilling Kinetics Pshb Mechanismsmentioning

confidence: 92%

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Persistent spectral hole-burning in a -doped aluminosilicate glass from 8 to 295 K: Study of the burning and refilling kinetics, and of optical dephasing

Beck

Karasik

Arvanitidis

et al. 2000

The European Physical Journal D

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High-temperature persistent spectral hole-burning (PSHB), up to room temperature, has been observed in a Eu 3+ -doped aluminosilicate glass using a high peak-power nanosecond dye laser. Spontaneous refilling as well as thermal cycling measurements show that at least two mechanisms, a fast and a slow one, are involved in our sample. We suggest that the fast or "easy" component may correspond to a non-photochemical local rearrangement of the host or to photoreduction of the Eu 3+ ions and that the second one leading to very stable photoproducts may correspond to transfer of an electron over a sizable distance through a several-step process. The mechanisms we suggest agree with light-induced hole refilling measurements. Line broadening mechanisms are discussed and the temperature-dependent part of the homogeneous width and of the spectral shift is interpreted in terms of a two-phonon (Raman) process involving pseudo-local phonons.

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Section: Burning and Refilling Kinetics Pshb Mechanismssupporting

confidence: 85%

Section: Discussionmentioning

confidence: 53%

mentioning

confidence: 76%

Section: Discussionmentioning

confidence: 99%

Section: Burning and Refilling Kinetics Pshb Mechanismsmentioning

confidence: 92%

See 3 more Smart Citations

Persistent spectral hole-burning in a -doped aluminosilicate glass from 8 to 295 K: Study of the burning and refilling kinetics, and of optical dephasing

Beck

Karasik

Arvanitidis

et al. 2000

The European Physical Journal D

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New Hole‐Burning Observations in Eu³⁺‐Ion‐Doped Glasses

et al. 2007

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Eu3+ -and Sm 2+ -ion-doped glasses have been attracting much interest because they exhibit room-temperature persistent spectral hole-burning (PSHB) properties and have great potential for use in high-density frequency-domain optical data storage. The primary object of this strategy involves the preparation of glasses that exhibit highly efficient PSHB at room temperature. Recently, we found that Al 3+ ions in glasses have the effect of increasing the PSHB efficiency of the rare-earth ions, though the formation mechanism of the burned holes remains unclear. Here, for the first time, we observe that the stable and persistent spectral holes are formed by two-step electron transfer through an activated Eu 3+ ion during laser irradiation. This new observation could be very significant when considering the hole-burning mechanism and developing PSHB materials. When irradiated by a laser beam, a spectral hole is formed at the position of the laser energy in the absorption band, the presence or absence of which can be used to encode a digital 1 or 0 as a memory unit.[1] This type of memory is a good candidate for ultra-high-density frequency-domain optical data storage. Many materials doped with rare-earth ions have been shown to display the property of PSHB; however, in most of them PSHB is limited at low temperature. The Sm 2+ and Eu 3+ions are a special case as they show PSHB at room temperature [2][3][4][5][6][7][8][9] and have a high potential for use in practical memories. As a host material for these rare-earth ions, glass is more favorable than crystals because of its ability to widely distribute rare-earth ions, high transparency, compositional variety, and ease of mass production. · 10 SiO 2 (in mol %), hereafter denoted as 1E-10A, 1E-40A, and 29E-60A, respectively, were prepared using a melt-quenching technique. After heating at 800°C in air, they were irradiated with an X-ray source. The obtained glasses are X-ray amorphous and do not contain the Eu 2+ ion.The spectral holes were burned on the Figure 1 shows typical examples of multiple holes burned in the 1E-10A glass using laser beams with five different wavelengths. It is evident that the presence or absence of holes is shown in the spectrum and this material is a good candidate for ultra-density frequency-domain data memory. The typical PSHB spectra for the three glasses prepared in this study are shown in Figure 2. The persistent holes are clearly observed at the burning position for the samples of 1E-10A and 1E-40A. Figure 1. PSHB spectrum of 1E-10A glass before and after hole-burning. Holes were burned at five wavenumbers. The difference between the fluorescence intensities before and after burning is shown at the top.

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Redox Reactions in Glasses

Othman

2023

Advances in Glass Research

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High-temperature persistent spectral hole burning of Eu^3+ ions in silicate glasses: new room-temperature hole-burning materials

Cited by 41 publications

References 26 publications

Persistent spectral hole-burning in a -doped aluminosilicate glass from 8 to 295 K: Study of the burning and refilling kinetics, and of optical dephasing

Persistent spectral hole-burning in a -doped aluminosilicate glass from 8 to 295 K: Study of the burning and refilling kinetics, and of optical dephasing

New Hole‐Burning Observations in Eu³⁺‐Ion‐Doped Glasses

Redox Reactions in Glasses

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High-temperature persistent spectral hole burning of Eu^3+ ions in silicate glasses: new room-temperature hole-burning materials

Cited by 41 publications

References 26 publications

Persistent spectral hole-burning in a -doped aluminosilicate glass from 8 to 295 K: Study of the burning and refilling kinetics, and of optical dephasing

Persistent spectral hole-burning in a -doped aluminosilicate glass from 8 to 295 K: Study of the burning and refilling kinetics, and of optical dephasing

New Hole‐Burning Observations in Eu3+‐Ion‐Doped Glasses

Redox Reactions in Glasses

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Product

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New Hole‐Burning Observations in Eu³⁺‐Ion‐Doped Glasses