High temperature performance of AlGaN/GaN HEMTs on Si substrates

Tan, W. S.; Uren, Michael J.; Fry, P. W.; Houston, P.A.; Balmer, R.S.; Martin, Trevor

doi:10.1016/j.sse.2006.02.008

Cited by 104 publications

(51 citation statements)

References 9 publications

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“…For example, HEMTs on Si(111) with L G = 41 µm and L DG = L GS =3.5 µm, have a I DSS,max α T -2.3 , whereas for L G = 2 µm I DSS,max α T -1.37 . Following this tendency, submicron gates should have even lower temperature dependence (T -β , with β between 0.5-0.7), as reported by Tan et al in [7].…”

Section: Contributed Articlesupporting

confidence: 53%

High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

Cuerdo

Calle

Braña

et al. 2008

Phys. Status Solidi (c)

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A study of the high temperature DC performance of nitride high electron mobility transistors (HEMTs) on Si(111) and sapphire substrates with different gate lengths is reported. All single gate transistors decrease their drain current (ID) and transconductance (gm) from room temperature (RT) up to 350 °C, mainly due to the electron mobility reduction by optical phonon scattering. At RT, HEMTs on Si(111) present higher ID and gm than transistors on sapphire, probably related to their lower self‐heating. As devices are heated, these differences tend to disappear, indicating that the substrate thermal conductivity becomes less important. Compact devices have low relative reduction in ID and gm values with temperature, since shorter gate lengths lead to higher fields under the gate and lower temperature dependence of the drift velocity. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlesupporting

confidence: 53%

High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

Cuerdo

Calle

Braña

et al. 2008

Phys. Status Solidi (c)

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“…Figure 2 further shows a complete reduction trend of G m,max in the E-and D-mode HEMTs against the rising temperature from 25 to 400 C. Degradation of G m is due to reduction of channel electron mobility with increased phonon scattering at higher temperature. 11) The circuit layout is the same as that presented by Wong et al 1) A photograph of the fabricated comparator is shown in Fig. 3, along with the schematic circuit diagram.…”

Section: Monolithic Integration Of Enhancement and Depletion-mode Hemmentioning

confidence: 99%

High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation

Kwan

Wong

Liu

et al. 2011

Jpn. J. Appl. Phys.

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This paper presents the dc and dynamic characterizations of a GaN-based voltage comparator, fabricated with monolithic integration of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The comparator features high gain (> 31 dB) and wide bandwidth (> 4 MHz), and small propagation delay time (< 20 ns) over a wide temperature range up to 250 C. Its dc gain is still 27.1 dB at 400 C. These results demonstrate the potential of the AlGaN/GaN HEMT technology for mixed-signal integrated circuits used in GaN power electronics that promises high-voltage, high-current, and high-temperature operation.

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“…and increased I g . Moreover, they show a similar temperature degradation rate in I max and g m,max, which is believed to be mainly caused by the reduced electron mobility in the channel layer [7]. On the other hand, the bi-layer transistors exhibit a smaller temperature degradation rate in I g , relative to that of the HfO 2 devices.…”

Section: Methodsmentioning

confidence: 85%

Impact of Al₂O₃ incorporation on device performance of HfO₂ gate dielectric AlGaN/GaN MIS‐HFETs

Tian¹,

Chor

2010

Phys. Status Solidi (c)

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We report the effects of Al2O3 interfacial layer incorporation on the dc performance of AlGaN/GaN metal‐insulator‐semiconductor field effect transistors (MIS‐HFETs) using HfO2 as the gate dielectric and surface passivation layer. The HfO2/Al2O3 bi‐layer MIS‐HFETs exhibit a larger maximum drain current by ∼8.5%, larger gate voltage swing by ∼6.3%, and smaller gate leakage by 4∼5 times, compared to the HfO2 single layer MIS‐HFETs at room temperature. Furthermore, the HfO2/Al2O3 transistors are observed to have better thermal stability than the HfO2 transistors, and the estimated lifetime (in hour) of the former is longer than that of the latter by over an order of magnitude from 25 to 150 °C (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High temperature performance of AlGaN/GaN HEMTs on Si substrates

Cited by 104 publications

References 9 publications

High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation

Impact of Al₂O₃ incorporation on device performance of HfO₂ gate dielectric AlGaN/GaN MIS‐HFETs

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High temperature performance of AlGaN/GaN HEMTs on Si substrates

Cited by 104 publications

References 9 publications

High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS‐HFETs

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Impact of Al₂O₃ incorporation on device performance of HfO₂ gate dielectric AlGaN/GaN MIS‐HFETs