High-Temperature Performance of a GaSe Nanosheet-Based Broadband Photodetector

Sorifi, Sahin; Moun, Monika; Kaushik, Shuchi; Singh, Rajendra

doi:10.1021/acsaelm.9b00770

Cited by 49 publications

(37 citation statements)

References 42 publications

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“…These reports show that the observed photocurrent is strongly dependent on light wavelength, which would limit the application potential of the broadband light sensor. Advancing the findings of previous reports, our experimental results reveal that the photocurrent is weakly wavelength dependent [ 10 , 15 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ]. The α roughly deviates by 30% at the three different wavelengths, which is much smaller than the reported values.…”

Section: Resultssupporting

confidence: 86%

“…This characteristic is more flexible and stable for a wide range of potential applications. The broadband light response has been observed in many low-dimensional systems [ 10 , 15 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ]. These reports show that the observed photocurrent is strongly dependent on light wavelength, which would limit the application potential of the broadband light sensor.…”

Section: Resultsmentioning

confidence: 99%

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The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Huang

Hung

Chou

et al. 2021

Sensors

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Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. Therefore, finding a wavelength-insensitive photosensor is imperative in this application. Photocurrent measurements were performed in Sb2Te3 flakes at various wavelengths ranging from visible to near IR light. The measured photocurrent change was insensitive to wavelengths from 300 to 1000 nm. The observed wavelength response deviation was lower than that in all previous reports. Our results show that the corresponding energies of these photocurrent peaks are consistent with the energy difference of the density of state peaks between conduction and valence bands. This suggests that the observed photocurrent originates from these band structure peak transitions under light illumination. Contrary to the most common explanation that observed broadband photocurrent carrier is mainly from the surface state in low-dimensional materials, our experimental result suggests that bulk state band structure is the main source of the observed photocurrent and dominates the broadband photocurrent.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Huang

Hung

Chou

et al. 2021

Sensors

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Section: Uv Pds Based On 2dlmsmentioning

confidence: 99%

2D Layered Materials for Ultraviolet Photodetection: A Review

Kaushik

Singh

2021

Advanced Optical Materials

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2D layered materials (2DLMs) have revolutionized the field of optoelectronics owing to their exceptional properties of strong light–matter interaction, atomic‐level thickness, flexibility, and ability to form van der Waals heterostructures. Most of the research in this area is based on narrow bandgap materials such as transition metal dichalcogenides, which are ideal for fabricating visible and infrared photodetectors. However, utilizing the benefits of 2D materials for the detection of ultraviolet light requires focus on newly emerging wide bandgap 2DLMs. In the present review, an attempt is made to highlight the significance of wide bandgap 2DLMs for fabricating state‐of‐the‐art ultraviolet photodetectors. In this review, first, the fundamentals of photodetectors, including various sensing mechanisms, are discussed. After describing the growth techniques briefly, the readers are introduced to the role of 2DLMs in ultraviolet photodetection based on their bandgap distribution. This is followed by a comprehensive review of the structure, properties and ultraviolet photodetectors based on various 2DLM families including main group metal chalcogenides (GaS, GaSe, GeS2), metal oxides (MoO3), metal halides (PbI2), metal phosphorus trichalcogenides (NiPS3, MnPS3) and hexagonal boron nitride (h‐BN). Finally, the review is summarized and the authors’ perspective is given on the challenges and upcoming development in this field.

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“…For example, at −10 V, the dark current for photodetector fabricated on bare film was measured to be 4.8×10 −8 A, while it was 5.4×10 −10 A for the passivated film based photodetector. The effect of reduction of the dark current was manifested in the photo-to-dark current ratio (PDCR) of the photodetector, which is given by [43][44][45] :…”

Section: Effect Of Sam On Al05ga05n Epilayersmentioning

confidence: 99%

“…As shown in FIG. 6 (d Besides improving the PDCR, SAM also led to an improvement in the responsivity of the photodetector, which is expressed as 27,44,45 :…”

Section: Effect Of Sam On Al05ga05n Solar-blind Photodetectormentioning

confidence: 99%

Organic passivation of Al_0.5Ga_0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance

Kaushik¹,

Naik²,

Ravikanth³

et al. 2021

Semicond. Sci. Technol.

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We report on the passivation of surface states of Al0.5Ga0.5N epilayers by employing self-assembled monolayers (SAM) of organic molecules, which led to a significant improvement in the performance of Al0.5Ga0.5N based solar-blind photodetector. The formation of SAM of meso-(5-hydroxyphenyl)-10,15,20-tri(p-tolyl) porphyrin (ZnTPP(OH)) on the surface of Al0.5Ga0.5N was probed by contact angle measurement (CA), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The successful passivation of surface states was confirmed by Kelvin probe force microscopy (KPFM) as a significant decrease in the surface potential of Al0.5Ga0.5N by ~280 mV was observed. The inference was supported by a four-fold increase in the photoluminescence (PL) intensity of the near-band edge emission (NBE) peak upon passivation. As a result, the dark current of the as-fabricated solar-blind photodetector reduced by 2 orders of magnitude, without compromising with the magnitude of the photo current at 270 nm. The role of SAM was evident in improving the performance of the photodetector as the peak value of photo-to-dark current ratio (PDCR) enhanced by ~36 times. The peak responsivity of the photodetector increased from 1.6 to 2.2 mA/W at 10 V. The significant reduction in the dark current and enhancement in the responsivity led to an improvement in the specific detectivity by ~10 times. Additionally, the response speed of the photodetector was found to improve significantly from 4 to 0.5 s.

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High-Temperature Performance of a GaSe Nanosheet-Based Broadband Photodetector

Cited by 49 publications

References 42 publications

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

2D Layered Materials for Ultraviolet Photodetection: A Review

Organic passivation of Al_0.5Ga_0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance

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High-Temperature Performance of a GaSe Nanosheet-Based Broadband Photodetector

Cited by 49 publications

References 42 publications

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

2D Layered Materials for Ultraviolet Photodetection: A Review

Organic passivation of Al0.5Ga0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance

Contact Info

Product

Resources

About

Organic passivation of Al_0.5Ga_0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance