2019
DOI: 10.1134/s0020168519010114
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High-Temperature Oxidation of Ti3SiC2-Based Materials Prepared by Spark Plasma Sintering

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Cited by 6 publications
(1 citation statement)
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“…Therefore, we performed SEM and EDS observations on the oxide layer of sample TSC‐SC5 oxidized for 20 h. Figure 11 shows the distribution of elemental Ti, Si, O, and C in the surface oxide layer. Sevost'yanov conducted oxidation testing on Ti 3 SiC 2 at 1200 ℃ and found that only a pure TiO 2 oxide layer was found on the matrix surface [27]. They believed that the oxidation process observed the following formula: 2Tnormali3SinormalC2+11normalO26TinormalO2+2SiO+4normalCO2.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, we performed SEM and EDS observations on the oxide layer of sample TSC‐SC5 oxidized for 20 h. Figure 11 shows the distribution of elemental Ti, Si, O, and C in the surface oxide layer. Sevost'yanov conducted oxidation testing on Ti 3 SiC 2 at 1200 ℃ and found that only a pure TiO 2 oxide layer was found on the matrix surface [27]. They believed that the oxidation process observed the following formula: 2Tnormali3SinormalC2+11normalO26TinormalO2+2SiO+4normalCO2.…”
Section: Resultsmentioning
confidence: 99%