High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

Francis, A. Matthew; Holmes, Jim; Chiolino, N.; Barlow, M.; Abbasi, Affan; Mantooth, H. Alan

doi:10.4071/2016-hitec-242

Cited by 11 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The long-term performance of solar system exploration instruments necessitates SiC electronics; for example, the parching atmosphere of Venus's surface at 460 • C requires high-temperature electronics [7]. With SiC power electronics, electric power distribution systems can be enhanced.…”

Section: Introductionmentioning

confidence: 99%

A Systematic Review on the Synthesis of Silicon Carbide: An Alternative Approach to Valorisation of Residual Municipal Solid Waste

Thulasiraman

Ganesapillai

2023

Processes

View full text Add to dashboard Cite

Over the past several decades, industrialised and developing nations have attempted to enhance sustainability. Demands for energy and the acceleration in environmental deterioration are the two primary obstacles to progress. The daily generation of municipal solid waste has been a significant factor in the deterioration of the ecology. To address this issue, a considerable amount of municipal solid waste may be used to synthesise SiC nanomaterials from organic and inorganic fractions and use them as carbon and silica sources. Nanomaterials have progressively received widespread prominence as the development of particulate materials accelerates at an incredible rate. One such material is silicon carbide (SiC), which has garnered considerable interest due to its remarkable performance and wide variety of applications. This review article discusses the SiC polytypes, including cubic, hexagonal, and rhombohedral SiC. The characteristics of silicon carbide, such as its biomimetic, surface, and thermal properties, are also discussed. In addition, the synthesis of silicon carbide was described in depth, including microwave sintering, the calcination method, the carbothermal redox reaction, and much more. The final section describes the applications of silicon carbide, including wastewater treatment, medical implants, and gas detection.

show abstract

Section: Introductionmentioning

confidence: 99%

A Systematic Review on the Synthesis of Silicon Carbide: An Alternative Approach to Valorisation of Residual Municipal Solid Waste

Thulasiraman

Ganesapillai

2023

Processes

View full text Add to dashboard Cite

show abstract

“…However, considering the successful pioneering space exploration missions (including landers) launched prior to the 1980's using comparably immature silicon IC technology of the time [15], the simplicity of today's wide bandgap ICs is not actually a major impediment preventing successful engineering of scientifically useful prolonged-mission Venus lander electronics. Arguably, a larger technical barrier to prolonged-mission Venus lander IC feasibility was that stable electrical operation in excess of 1 week has not been reported for the majority of wide bandgap T ≥ 460 • C IC demonstrations conducted to date [16]- [23].…”

Section: Introductionmentioning

confidence: 99%

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Neudeck

Chen

Meredith

et al. 2019

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

Prolonged Venus surface missions (lasting months instead of hours) have proven infeasible to date in the absence of a complete suite of electronics able to function for such durations without protection from the planet's extreme conditions of ∼460 • C, ∼9.3 MPa (∼92 Earth atmospheres) chemically reactive environment. Here, we report testing data from a successful two-month (60-day) operational demonstration of two 175-transistor 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits directly exposed (no cooling and no protective chip packaging) to a high-fidelity physical and chemical reproduction of Venus surface atmospheric conditions in a test chamber. These results extend the longest reported duration of electronics operation in Venus surface atmospheric conditions almost threefold and were accomplished using prototype SiC JFET chips of more than sevenfold increased complexity. The demonstrated advancement marks a significant step toward realization of electronics with sufficient complexity and durability for implementing robotic landers capable of returning months of scientific data from the surface of Venus. INDEX TERMS Silicon carbide, high-temperature techniques, JFET integrated circuits, space technology.

show abstract

“…Analog and digital ICs realized in bipolar SiC technology using emitter-coupled logic (ECL) have previously been demonstrated at 500 °C [3]. The MOSFET because of its critical gate oxide, is not an ideal candidate for HT applications, however, CMOS based digital circuits have been reported to work up to 470 °C [4]. The standard Si-CMOS topologies on SiC for the master-slave DFF, and data-reset FF, designed with MESFETs working in the temperature range 25 °C -250 °C are reported in [5].…”

Section: Introductionmentioning

confidence: 99%

A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology

Shakir¹,

Hou²,

Zetterling³

2019

MSF

View full text Add to dashboard Cite

This work presents the design, in-house fabrication, and electrical characterization of a monolithic medium scale integrated (MSI) D-type flip-flop (DFF). It consists of 65 n-p-n bipolar transistors and 49 integrated resistors. The monolithic bipolar DFF is realized using basic gates by employing the structured way of implementation, whereas the basic gates are implemented by employing the conventional transistor-transistor logic (TTL). The positive-edge-triggered DFF, with synchronous active-low reset is characterized in the temperature range of 25-500 °C. The circuit has been tested in two modes of operation; data input mode and clock divider. Non-monotonous temperature dependence is observed for the flip-flop propagation-delay clock-to-output (tPCQ), rise-time and fall-time; decreases with the temperature in the range 25 °C to 300 °C, while it increases in the range 300 °C to 500 °C. The transient response has also been measured at a clock frequency of 100 kHz. At T = 400 °C and VCC = 15 V, the DFF consumes minimum energy ≈ 234 nJ.

show abstract

High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

Cited by 11 publications

References 15 publications

A Systematic Review on the Synthesis of Silicon Carbide: An Alternative Approach to Valorisation of Residual Municipal Solid Waste

A Systematic Review on the Synthesis of Silicon Carbide: An Alternative Approach to Valorisation of Residual Municipal Solid Waste

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology

Contact Info

Product

Resources

About