High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

Kaneko, Mitsuaki; Kimoto, Tsunenobu

doi:10.1109/led.2018.2822261

Cited by 33 publications

(17 citation statements)

References 14 publications

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“…SiC is at disadvantage with respect to silicon because defects at the interface reduce mobility with respect to both the ideal 2D mobility and the bulk mobility [19], [20]. Beyond the effort in improving channel mobility, today one can choose devices in which transport occurs in the bulk, such as JFETs [21], [22]. GaN, instead, has an advantage in terms of the achievable 2D mobility [23], due to a very high density of the 2D electron gas at the GaN/AlGaN interface, and modulation doping using AlGaN piezoelectric properties [24].…”

Section: A Basic Properties Of Wbg Materialsmentioning

confidence: 99%

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

et al. 2021

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The expansion of the electric vehicle market is driving the request for efficient and reliable power electronic systems for electric energy conversion and processing. The efficiency, size, and cost of a power system is strongly related to the performance of power semiconductor devices, where massive industrial investments and intense research efforts are being devoted to new wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN). The electrical and thermal properties of SiC and GaN enable the fabrication of semiconductor power devices with performance well beyond the limits of silicon. However, a massive migration of the power electronics industry towards WBG materials can be obtained only once the corresponding fabrication technology reaches a sufficient maturity and a competitive cost. In this paper, we present a perspective of power electronics based on WBG semiconductors, from fundamental material characteristics of SiC and GaN to their potential impacts on the power semiconductor device market. Some application cases are also presented, with specific benchmarks against a corresponding implementation realized with silicon devices, focusing on both achievable performance and system cost.

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Section: A Basic Properties Of Wbg Materialsmentioning

confidence: 99%

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

et al. 2021

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“…The use of complementary JFETs, which are mastered in the framework of a number of modern technological processes [10,11], provides a low noise level and increased resistance of analog microcircuits to the effects of penetrating radiation. For many problems of analog circuitry, floating FDSs are promising not only on silicon JFETs, but also on JFETs based on SiC, GaN, GaAs transistors [12].…”

Section: Introductionmentioning

confidence: 99%

Basic Modifications of "Floating" Differential Stages Based on Complementary Field-Effect Transistors with a Control p-n Junction

Chumakov¹,

Prokopenko²,

Pakhomov³

et al. 2021

Preprint

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The circuitry of the summarized "floating" differential stages (FDS) based on complementary field-effect transistors with a control p-n junction (CJFET), intended for use in low-noise analog microcircuits, for example, operational amplifiers. The results of modeling the flow characteristics of one of the CJFET FDSs in the LTSpice XVII environment at low temperatures (down to -197 0С) and exposure to a neutron flux in the range of 1e13 ÷ 1e15 n / cm2 are presented.

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“…The advantage of SiC JFETs over SiC MOSFETs is that no gate insulator films are required [7][8][9][10]. Thus, SiC JFETs are potentially useful in environments with high junction temperatures [11,12] by using advanced high-temperature packaging technology.…”

Section: Introductionmentioning

confidence: 99%

AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET

Sakamoto

Yokoyama

Hozoji

2020

IEEJ Transactions Elec Engng

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Theoretically, normally-off silicon carbide (SiC) junction field-effect transistors (JFETs) do not require a negative gate voltage supply because they are in an off-state when the gate-source voltage is 0 V. However, most gate drivers for normally-off SiC JFETs require not only a positive power supply for turning on the JFET but also a negative power supply for turning it off and maintaining a negative gate-source voltage to suppress a false turn-on power loss caused by crosstalk during fast switching. Therefore, modifications of gate drivers increase complications and costs. In this study, a normally-off SiC JFET gate driver, which can be realized using a simple circuit configuration with a single power supply, is proposed. To minimize undesirable crosstalk, the gate-source voltage of the JFET is driven to a negative value and retained in the state for a long period of time.

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High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

Cited by 33 publications

References 14 publications

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

Basic Modifications of "Floating" Differential Stages Based on Complementary Field-Effect Transistors with a Control p-n Junction

AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET

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