High-temperature molecular beam epitaxy of hexagonal boron nitride layers (Conference Presentation)

Cheng, T.S.; Summerfield, Alex; Albar, J.D.; Davies, Andrew J.; Mellor, Christopher J.; Khlobystov, Andrei N.; Eaves, L.; Foxon, C.T.; Beton, Peter H.; Новиков, С. В.

doi:10.1117/12.2286495

Cited by 3 publications

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“…The h-BN ribbons form a partial single layer along with very small multi-layer regions (bilayer or trilayer h-BN) as shown in figure 1(c). The ribbons are ~1 µm wide and ~ 50 µm long and are in agreement with our previous observations of h-BN grown on HOPG under similar conditions 21,23 . It is worthwhile noting that some of these ribbons.…”

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confidence: 92%

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Pierucci

Zribi

Henck

et al. 2018

Applied Physics Letters

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We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.

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supporting

confidence: 92%

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Pierucci

Zribi

Henck

et al. 2018

Applied Physics Letters

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“…Atomically thin h‐BN system has been developed by the MBE technique on TM foils and highly oriented pyrolytic graphite substrates. [ 214–216 ] For the preparation of BN by the MBE method, the B element sources used are generally heated boron and heated B 2 O 3 , while the N sources are usually nitrogen plasma and NH 3 gas, among others. [ 214–218 ] The size of the 2D h‐BN grown by an MBE can also reach the magnitude of a few millimeters, which confirms that MBE is indeed a promising alternative to exfoliation and CVD for growing h‐BN systems.…”

Section: Growth Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III‐nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin‐based devices, and gas detectors. Although the developments of 2D h‐BN materials have been successful, the fabrication of other 2D III‐nitride materials, such as 2D h‐AlN, h‐GaN, and h‐InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III‐nitride materials are summarized. The properties of the 2D III‐nitride materials are mainly obtained by first‐principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III‐nitride materials is focused on 2D h‐BN and h‐AlN, as the developments of 2D h‐GaN and h‐InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h‐BN materials; however, many potential applications are cited for the entire range of 2D III‐nitride materials. Finally, future research directions and prospects in this field are also discussed.

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The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy

et al. 2022

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In this report, quantum dots of hexagonal boron nitride (h-BN) were fabricated on the surface of polycrystalline Ni film at low growth temperatures (700, 750, and 800 °C) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction could trace the surface condition during the growth and perform the formation of BN. The observation of surface morphology by scanning electron microscopy and atomic force microscopy showed the nanodots of BN on Ni films. The existence of crystal h-BN quantum dots was determined by the analysis of Raman spectra and Kevin probe force microscopy. The cathodoluminescence of h-BN quantum dots performed at the wavelength of 546 and 610 nm, attributed to the trapping centers involving impurities and vacancies. Moreover, the influence of temperatures for the substrate and boron source cell was also investigated in the report. When the k-cell temperature of boron and growth temperature of substrate increased, the emission intensity of cathodoluminescence spectra increased, indicating the better growth parameters for h-BN quantum dots.

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High-temperature molecular beam epitaxy of hexagonal boron nitride layers (Conference Presentation)

Cited by 3 publications

References 0 publications

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

2D III‐Nitride Materials: Properties, Growth, and Applications

The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy

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