2004
DOI: 10.1063/1.1641174
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High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers

Abstract: Articles you may be interested inSurface-emitting terahertz quantum cascade lasers with continuous-wave power in the tens of milliwatt range Appl. Phys. Lett. Characterization and analysis of single-mode high-power continuous-wave quantum-cascade laser J. Appl. Phys. 98, 084508 (2005); 10.1063/1.2112170 Cavity-length effects of high-temperature high-power continuous-wave characteristics in quantum-cascade lasers Appl. Phys. Lett. 83, 5136 (2003); 10.1063/1.1634689High-power continuous-wave operation of a 6 μm … Show more

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Cited by 138 publications
(76 citation statements)
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“…[2][3][4][5][6][7] This is enabled by their complex structure, in which the sequence of alternating layers of different semiconductor materials is repeated many times. The first QCLs have been realized in the InGaAs/ AlInAs system, lattice matched on InP, and a significant improvement of the device performance, such as broad-band emission 8 or continuous wave room temperature 9 and ultrahigh power operation 10 has been achieved since. On the other hand, the GaAs/ AlGaAs system offers more growth flexibility, and since the first QCL realization 5 an impressive extension of the emission wavelength range from mid-infrared to terahertz 11,12 has been demonstrated.…”
Section: Introductionmentioning
confidence: 99%
“…[2][3][4][5][6][7] This is enabled by their complex structure, in which the sequence of alternating layers of different semiconductor materials is repeated many times. The first QCLs have been realized in the InGaAs/ AlInAs system, lattice matched on InP, and a significant improvement of the device performance, such as broad-band emission 8 or continuous wave room temperature 9 and ultrahigh power operation 10 has been achieved since. On the other hand, the GaAs/ AlGaAs system offers more growth flexibility, and since the first QCL realization 5 an impressive extension of the emission wavelength range from mid-infrared to terahertz 11,12 has been demonstrated.…”
Section: Introductionmentioning
confidence: 99%
“…1 However, more than 20 years passed until the experimental realization was demonstrated by Faist et al at Bell Laboratories on an InP substrate. 2 Since then tremendous progress in QCL research has resulted in bidirectional, 3 multiwavelength, 3,4 ultrabroadband, 5 above room temperature continuous-wave ͑cw͒ operation, [6][7][8] sum-frequency and higher order harmonic generation, [9][10][11] and fully integrated electrically pumped Raman lasers. 12 Moreover, laser operation has been reported on other material systems, i.e., AlGaAs on a GaAs substrate 13 and Al͑Ga͒Sb on InAs.…”
Section: Introductionmentioning
confidence: 99%
“…This device had no DFB structure and operated in single mode, most likely because of a small defect in the laser cavity. Recently, high-power cw QCLs have been developed to operate at 4.3-6 µm at power levels up to 600 mW [6], but as Fabry-Pérot devices these lasers exhibit multimode emission. More recently, new devices emitting at ∼ 9 and 5.4 µm with an embedded DFB structure have been developed [7,8].…”
Section: Introductionmentioning
confidence: 99%