High temperature high accuracy piezoresistive pressure sensor based on smart-cut soi

Quo, Shuwen; Eriksen, H.; Childress, Kimiko; Fink, A.; Hoffman, Mary

doi:10.1109/memsys.2008.4443800

Cited by 13 publications

(6 citation statements)

References 4 publications

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“…The authors of article [ 4 ] describe an innovative fire detection system developed by Goodrich’s Advanced Sensors Technical Centre. The system uses multiple sensors with different technology to allow distinction between real fire events and false alarm triggers.…”

Section: Introductionmentioning

confidence: 99%

Electrical Disturbances in Terms of Methods to Reduce False Activation of Aerial Fire Protection Systems

Żyluk

Zieja

Szelmanowski

et al. 2022

Sensors

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The paper presents an analysis of false triggers of fire protection systems installed on aircraft. They not only cause task interruption but also have a direct impact on flight safety, forcing the crew to land in a risky area. Simulation models of electronic actuators were developed to determine the conditions under which false alarms occur. Testing of the simulation models was carried out in the computational package Matlab-Simulink and Circum-Maker for different electrical disturbance generation conditions. The simulation of overvoltage, voltage drops and voltage decays in the on-board electrical network supplying the fire protection system, occurring during the start-up of aircraft engines and during the switching on and off of on-board high-power devices, was studied. The conducted studies have practical applications since the simulation results are an important element for planning experimental tests of the SSP-FK-BI executive blocks under electrical disturbance conditions. Based on the simulation and experimental studies, the conditions causing false tripping of the fire protection system and the parameters for selected disturbance factors have been determined.

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Section: Introductionmentioning

confidence: 99%

Electrical Disturbances in Terms of Methods to Reduce False Activation of Aerial Fire Protection Systems

Żyluk

Zieja

Szelmanowski

et al. 2022

Sensors

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“…An alternative to this problem is the use of pressure sensors with SOI (silicon on insulator), due to their adequate operation above 300 • C [7,8]. On the other hand, some wide bandgap semiconductors have been proposed.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the Piezoresistivity of a Thin Film of ZnO Doped with Fluorine and Deposited via the Ultrasonic Spray Pyrolysis Technique for Applications in Micro/Nano-Electromechanical Sensors

et al. 2022

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In this study, thin films of zinc oxide doped with fluorine ZnO: F were deposited via ultrasonic spray pyrolysis (USP) with an atomic ratio of [F/Zn] in a starting solution of 15 at.% on borosilicate glass coverslips and SiO2/Si substrates. The structure, electrical resistivity, and thickness were obtained via X-ray diffraction, the four-point technique, and profilometry, respectively. A ZnO: F piezoresistor was modeled at the fixed end of the cantilever through lithography and chemical etching. A SiO2/Si cantilever structure was used to evaluate the piezoresistivity of a ZnO: F thin film, and temperature coefficient of resistance (TCR) measurements were performed in an electric furnace. The strain on the ZnO: F piezoresistor caused by the application of masses at the free end of the cantilever was determined using a theoretical equation, in addition to a simulation in the COMSOL Multiphysics 5.3a FEM (finite element method) software considering the dimensions and materials of the manufactured device. The ZnO: F thin films were hexagonal wurtzite (phase 002), with thicknesses in the range from 234 nm to 295 nm and with resistivities of the order of 10−2 Ω.cm. The ZnO: F thin-film piezoresistor showed a gauge factor (GF) of 12.7 and a TCR of −3.78 × 10−3 %/K up to 525 K, which are suitable properties for sensor development.

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“…In 2008 the Shuwen Guo, Harald et all, proposed that the maximum operating temperature of a piezoresistive sensors can be raised when the silicon film is sufficiently thin. The minority-carrier exclusion effect in ultra thin film Smart-cut SOI enables resistance values to increase monotonically with temperature up to 600oC [9].…”

Section: Introductionmentioning

confidence: 99%

A Review on Evolution, Current Trends and Future Scope of MEMS Piezoresistive Pressure Sensor

Balavalad¹,

Sheeparmatti²

2015

IJERT

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Piezoresistive pressure sensors are the first MEMS devices to be commercialized. They work on the principle of change in resistivity of materials due to applied pressure. Literature reports lot of work and development in this area of sensing mechanisms. This paper provides a review on evolution of these sensors right from thin metal film based technology to the semiconductor technology. The paper presents the current trends in the design and use of piezoresistive pressure sensor. The paper also presents the future scope form these sensors which, will be around the extensive use of materials like SOI, SiC, DLC, CNT and Silicon Nanowires.

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High temperature high accuracy piezoresistive pressure sensor based on smart-cut soi

Cited by 13 publications

References 4 publications

Electrical Disturbances in Terms of Methods to Reduce False Activation of Aerial Fire Protection Systems

Electrical Disturbances in Terms of Methods to Reduce False Activation of Aerial Fire Protection Systems

Evaluation of the Piezoresistivity of a Thin Film of ZnO Doped with Fluorine and Deposited via the Ultrasonic Spray Pyrolysis Technique for Applications in Micro/Nano-Electromechanical Sensors

A Review on Evolution, Current Trends and Future Scope of MEMS Piezoresistive Pressure Sensor

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