High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 [micro sign]m

Yarekha, Dmitri; Glastre, G.; Pérona, A.; Rouillard, Y.; Genty, F.; Skouri, E. M.; Boissier, G.; Grech, P.; Joullié, A.; Alibert, C.; Баранов, А. Н.

doi:10.1049/el:20000416

Cited by 69 publications

(20 citation statements)

References 2 publications

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“…Приборы были изготовлены из полупроводнико-вой гетероструктуры на основе твердых растворов GaInAsSb/AlGaAsSb, описанной в работах [7]. Изготов-ленные образцы представляли собой лазеры со сдво-енными дисковыми резонаторами (радиус диска 100 и 200 мкм) с различными расстояниями между ними 0−6 мкм.…”

Section: изготовление образцов и постановка экспериментаunclassified

Коллективные Моды В Сдвоенных Полупроводниковых Дисковых Лазерах На Модах Шепчущей Галереи

Ройз¹,

Баранов²,

Именков³

et al. 2017

Физика И Техника Полупроводников

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На основе квантово-размерной наногетероструктуры GaInAsSb/AlGaAsSb изготовлены и исследованы об-разцы сдвоенных полупроводниковых дисковых лазеров (длина волны излучения λ ≈ 2.28 мкм), работающих на модах шепчущей галереи. Изучены спектры излучения и диаграммы направленности лазерных систем двух типов -с наличием перемычки между резонаторами и без нее. Обнаружено появление коллективных мод в обоих типах сдвоенных дисковых лазеров с межмодовым расстоянием, в 2 раза меньшим, чем у одиночных лазеров. Высказано предположение, что данный эффект обусловлен перетеканием излучения из одного дискового лазера в другой.

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Section: изготовление образцов и постановка экспериментаunclassified

Коллективные Моды В Сдвоенных Полупроводниковых Дисковых Лазерах На Модах Шепчущей Галереи

Ройз¹,

Баранов²,

Именков³

et al. 2017

Физика И Техника Полупроводников

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“…With such a design, a strong confinement of the electrons and holes in the well is ensured at 2.3 mm. Band offsets of 490 meV for the electrons and 170 meV for the heavy hole are estimated for the MQW structure which should allow high quantum efficiency and high temperature operation [11]. The barrier bandgap was 1.05 mm, which authorizes an efficient optical pumping with a commercial and low cost 830 nm laser diode.…”

Section: Mqw Gain Regionmentioning

confidence: 99%

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm

Cerutti

Garnache

Ouvrard

et al. 2004

Journal of Crystal Growth

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“…This approach was found to be successful for development of diode lasers with longer wavelengths. There is widespread interest in high-power 2.3-lm type I quantum-well GaInAsSb/ AlGaAsSb/GaSb laser diodes [2][3][4][5] and laser diode arrays, 6 motivated by a broad range of applications including low-quantum-defect pumping of midinfrared semiconductor lasers for infrared (IR) countermeasures. 7 The recent application of multimode laser diodes with spectrum narrowing for efficient pumping of gas lasers presents opportunities for scaling up laser diode pumped high-power gas laser systems.…”

Section: Introductionmentioning

confidence: 99%

2.3-μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor

Donetsky

Chen

Shterengas

et al. 2008

Journal of Elec Materi

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Arrays of 100-lm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 ls, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated. INTRODUCTIONLow-threshold-current GaSb-based laser diodes with a strained GaInAsSb quantum-well (QW) active region operating at room temperature with wavelengths near 2 lm have been demonstrated. 1 These devices employ wide-bandgap AlGaAsSb barrier layers to provide carrier confinement and good thermal stability. This approach was found to be successful for development of diode lasers with longer wavelengths. There is widespread interest in high-power 2.3-lm type I quantum-well GaInAsSb/ AlGaAsSb/GaSb laser diodes 2-5 and laser diode arrays, 6 motivated by a broad range of applications including low-quantum-defect pumping of midinfrared semiconductor lasers for infrared (IR) countermeasures. 7 The recent application of multimode laser diodes with spectrum narrowing for efficient pumping of gas lasers presents opportunities for scaling up laser diode pumped high-power gas laser systems. 8 Atmospheric transparency in the 2 lm to 2.4 lm spectral region opens up a range of potential applications including atmospheric monitoring, range finding, and free-space optical (FSO) communications. Calculations show that the background noise power due to scattered solar radiation in this wavelength range is significantly lower than that at k = 1.5 lm currently utilized in FSO systems. Additionally, the 2 lm to 2.4 lm transparency window is free from scattered thermal radiation from Earth which peaks near k = 10 lm (Fig. 1). Finally, photon detection in the 2 lm to 2.4 lm wavelength range does not require expensive photodetector cooling in order to achieve background-power-limited performance. All these factors make this window attractive for applications associated with signal transmission in the atmosphere and stimulate research on improving lasers operating in this wavelength range.A new generation of 2.4-lm GaSb-based laser diodes with a significant reduction of threshold current density down to 200 A/cm 2 was obtained by increasing the QW compressive strain from 1.2% to 1.6%. 9 It has been shown 10 that the increased strain improves the laser performance not only through the reduction of the joint density of states but also by improving hole confinement in the QW. This second effect is particularly important in the GaInAsSb/ AlGaAsSb material system lattice matched to GaSb as hole confinement is marginal in these materials. Improving the hole confinement reduces thermally activated hole redistribution between the QW subbands and the barrier bulk states, increasing the

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High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 [micro sign]m

Cited by 69 publications

References 2 publications

Коллективные Моды В Сдвоенных Полупроводниковых Дисковых Лазерах На Модах Шепчущей Галереи

Коллективные Моды В Сдвоенных Полупроводниковых Дисковых Лазерах На Модах Шепчущей Галереи

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm

2.3-μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor

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