High temperature gain measurements in optically pumped ZnCdSe-ZnSe quantum wells

Rees, Paul; Heffernan, J.; Logue, F. P.; Donegan, John F.; Jordan, C.; Hegarty, J.; Hiei, F.; Ishibashi, Akira

doi:10.1049/ip-opt:19960172

Cited by 8 publications

(3 citation statements)

References 8 publications

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“…Moreover, the use of 2D materials could be advantageous for a wide range of applications in nanotechnology [ 8 - 13 ] and memory technology [ 14 - 16 ]. Among those hybrid systems, the superlattices are considered as one of the most promising nanoscale engineered material systems for their possible applications in fields such as high figure of merit thermoelectrics, microelectronics, and optoelectronics [ 17 - 19 ]. While the research interest in graphene-based superlattices is growing rapidly, people have started to question whether the graphene could be replaced by its close relatives, such as 2D hexagonal crystals of Si and Ge, so called silicene and germanene, respectively.…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of germanene/MoS2 monolayer and silicene/MoS2 monolayer superlattices

Zhou

et al. 2014

Nanoscale Res Lett

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Superlattice provides a new approach to enrich the class of materials with novel properties. Here, we report the structural and electronic properties of superlattices made with alternate stacking of two-dimensional hexagonal germanene (or silicene) and a MoS2 monolayer using the first principles approach. The results are compared with those of graphene/MoS2 superlattice. The distortions of the geometry of germanene, silicene, and MoS2 layers due to the formation of the superlattices are all relatively small, resulting from the relatively weak interactions between the stacking layers. Our results show that both the germanene/MoS2 and silicene/MoS2 superlattices are manifestly metallic, with the linear bands around the Dirac points of the pristine germanene and silicene seem to be preserved. However, small band gaps are opened up at the Dirac points for both the superlattices due to the symmetry breaking in the germanene and silicene layers caused by the introduction of the MoS2 sheets. Moreover, charge transfer happened mainly within the germanene (or silicene) and the MoS2 layers (intra-layer transfer), as well as some part of the intermediate regions between the germanene (or silicene) and the MoS2 layers (inter-layer transfer), suggesting more than just the van der Waals interactions between the stacking sheets in the superlattices.

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Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of germanene/MoS2 monolayer and silicene/MoS2 monolayer superlattices

Zhou

et al. 2014

Nanoscale Res Lett

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“…1,2 As a consequence of the expanding demand for semiconductors which are relevant and useful for various electronic and optical devices, group II-VI compounds and their quantum wells have assumed tremendous importance in the past few years. [3][4][5][6][7][8][9][10][11][12][13][14][15] The high quality of the interface with chemical and structural stability offers great potential in device applications for these systems as strong nonlinearities in semiconductor superlattices ͑SLs͒ based on II-VI compounds. [3][4][5][6][7][8] Since the suitability of a material for a particular device is revealed by its overall electronic structure, the theoretical calculation of these materials has become a necessity from a basic of research and practical applications.…”

Section: Introductionmentioning

confidence: 99%

“…There has been great interest in the multilayer growth of II-VI compounds for optoelectronic device applications in the visible-to-ultraviolet range in optoelectronic device applications ͑e.g., blue lasers on ZnSe heterostructures͒. [5][6][7][8][9][10][11] For a basic understanding of the related phenomena and an optimization of materials for relevant processes ͑band-structure engineering͒, a quantitative knowledge of the electronic properties of these compounds and their interfaces is needed. Semiconductor SLs consisting of alternate layers of different materials provide extra dimensions for tailoring material properties.…”

Section: Introductionmentioning

confidence: 99%

Tight-binding calculations of ZnSe/Si wurtzite superlattices: Electronic structure and optical properties

Laref

Sekkal

Laref

et al. 2008

Journal of Applied Physics

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Our study is devoted to the theoretical investigation of the electronic and optical properties of ͑ZnSe͒ n / ͑Si 2 ͒ m ͑0001͒ wurtzite ͑WZ͒ superlattices ͑SLs͒ with the range n = m = 1 -18, giving special attention to the role of interface states at the Zn-Si and Se-Si polar interfaces. The calculations are performed by means of a semiempirical tight-binding model with an sp 3 s ‫ء‬ basis. The procedure involves the construction of a tight-binding Hamiltonian model of WZ SLs from the WZ bulk in the ͑0001͒ direction with different n and m layers. For ͑ZnSe͒ 16 / ͑Si 2 ͒ 16 SL, we found that the energy band gap is close to 1.665 eV, with the conduction-band minimum located at the ⌫ point. The states at the conduction-and valence-band edges are confined two dimensionally in the Si layers. For a valence-band discontinuity ⌬E v = 1.09 eV given by Harrison theory, the band gap between the confined band edges states increases ͑2.37 eV at the ⌫ point for n = m =2͒ by decreasing the superlattice period. It is shown that the heterointerface bond relaxation strongly affects interface band in the band gap. In the ͑ZnSe͒ 10 / ͑Si 2 ͒ 10 SL, the relaxed Si bonds at the heterointerface induce a vacant interface band and a filled interface band in the band gap. The band structures of ͑ZnSe͒ n / ͑Si 2 ͒m ͑0001͒ ͑WZ͒ ͑SLs͒ with different layer thickness are used to determine the electron and hole effective masses. Furthermore, the calculated absorption spectra of the superlattices are found to be quite different from those of bulk ZnSe and Si but fairly close to their average. The electronic structure of the superlattice turns out to be quite sensitive to the combination of the well and barrier layer thickness. This sensitivy suggests the possibility of designing suitable band structures for device application.

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Tight-binding calculations: Electronic structure and interfacial properties of (ZnSe)n/ (Si 2) msuperlattices

Laref

Aourag

2002

Superlattices and Microstructures

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High temperature gain measurements in optically pumped ZnCdSe-ZnSe quantum wells

Cited by 8 publications

References 8 publications

Structural and electronic properties of germanene/MoS2 monolayer and silicene/MoS2 monolayer superlattices

Structural and electronic properties of germanene/MoS2 monolayer and silicene/MoS2 monolayer superlattices

Tight-binding calculations of ZnSe/Si wurtzite superlattices: Electronic structure and optical properties

Tight-binding calculations: Electronic structure and interfacial properties of (ZnSe)n/ (Si 2) msuperlattices

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