High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>Doping

Ahsan, Nazmul; Amemiya, Tomohiro; Shuto, Yusuke; Sugahara, Satoshi; Tanaka, Mitsugu

doi:10.1103/physrevlett.95.017201

Cited by 216 publications

(53 citation statements)

References 25 publications

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“…According to the delta function-like doping profile, the Mn atoms are expected to substitute for all Ga sites in a single layer, which can exhibit high transition temperatures close to room temperature due to local high dopant and carrier concentration (Nazmul et al, 2005). Recent theoretical considerations show that ferromagnetism can be stabilized in such a single layer of magnetic ions (Melko et al, 2007), although the Mermin-Wagner theorem implies that in the absence of magnetic anisotropy gapless spin excitations always destroy the ferromagnetic order in two dimensions.…”

Section: C4 Ferromagnetic Spin-rtdsmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

916

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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Section: C4 Ferromagnetic Spin-rtdsmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

916

1,204

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“…On one hand, these δ-doped structures allow a concentration of Mn higher than in random-doped (Mn) III-V semiconductors, and thus, due to the different valence between the group III atom and the substitutional Mn, can produce in principle a larger concentration of holes, enhancing the Curie temperature (T C ) of the system. On the other hand, DMS T C can increase considerably also because it depends on the spatial distribution of magnetic ions, which can change substantially in low-dimensional systems: Nazmul and co-workers [2] showed that in a p-type selectively doped III-V heterostructured composed of Mn δ-doped GaAs/p-AlGaAs a remarkably high T C of about 250 K can be reached; in Ref. [3] Chen et al report T C well above room temperature in GaSb/Mn digital alloys.…”

Section: Introductionmentioning

confidence: 99%

Ab initioelectronic structure, optical, and magneto-optical properties of MnGaAs digital ferromagnetic heterostructures

et al. 2015

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We report on a theoretical study of the electronic, optical, and magneto-optical properties of digital ferromagnetic heterostructures based on Mn δ-doped GaAs. We consider different structures corresponding to Mn contents within the range 12%-50% and we study how the system changes as a function of the doping concentration. Our first-principles approach includes the spin-orbit interaction in a fully relativistic pseudopotential scheme and the local-field effect in the description of the optical absorption. We show that Mn δ-doped GaAs shares many properties with the uniformly doped Ga 1−x Mn x As system, i.e., half-metallicity, similar absorption spectra, and moderate Kerr rotation angles in the visible spectral region.

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“…Picosecond spin dynamics of photoinduced (nonequilibrium) spin polarization is also of major interest in ferromagnetic semiconductors of the type Ga 1−x Mn x As, which have recently been shown to reach Curie temperatures up to T C ≈ 250 K in suitable heterostructures (Nazmul et al, 2005). This technique is believed to contribute to the development of ultrafast magnetic devices in spintronics.…”

Section: Magneto-optical Semiconductorsmentioning

confidence: 99%

Magneto‐optical Materials

Kleemann¹

2007

Handbook of Magnetism and Advanced Magnetic Materials

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After introducing the concepts of linear and nonlinear magneto‐optics in the visible spectral range, the flourishing field of X‐ray circular and linear dichroism is briefly discussed with pertinent examples. The experimental part starts with the basic idea of magneto‐optic ellipsometry and then focuses on the development of new experimental techniques like vector magneto‐optical Kerr effect (MOKE), diffracted MOKE, dynamic MOKE, nonlinear MOKE, and magneto‐optic X‐ray microscopy. Specified and timely material aspects are finally discussed under the topics magneto‐optical storage materials, magnetic semiconductors, antiferromagnets, and magnetophotonic crystals. It is stressed that the magneto‐optical probe is indispensable in the limits of very short times ( femtomagnetism ), that it plays a leading role in the development of spintronics , and that nano‐ and microstructured magnetic materials have opened the new field of magnetophotonics .

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High Temperature Ferromagnetism in GaAs-Based Heterostructures with MnδDoping

Cited by 216 publications

References 25 publications

Semiconductor spintronics

Semiconductor spintronics

Ab initioelectronic structure, optical, and magneto-optical properties of MnGaAs digital ferromagnetic heterostructures

Magneto‐optical Materials

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