High temperature excitonic stimulated emission from ZnO epitaxial layers

Bagnall, Darren M.; Chen, Y. F.; Zhu, Z. Q.; Yao, Takafumi; Shen, Mengyan; Goto, T.

doi:10.1063/1.122077

Cited by 783 publications

(390 citation statements)

References 9 publications

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“…The similarity of the ZnO-layer CL spectrum and the LED EL spectrum, and the thermostability of the emission and very large exciton binding energy of ZnO ͑ϳ60 meV͒, suggest that the UV emission of the n-ZnO/p-AlGaN LED is mainly excitonic in nature. In earlier reports, Bagnall et al 13 observed stimulated excitonic emission at relatively high temperatures, up to 550 K. However, other radiative mechanisms, such as donor-acceptor, donor-hole, and acceptor-electron transitions can also take place and contribute to this EL NBE emission.…”

mentioning

confidence: 99%

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Alivov

Kalinina

Cherenkov

et al. 2003

Applied Physics Letters

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455

164

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We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I–V characteristics, with threshold voltage ∼3.2 V and low reverse leakage current ∼10−7 A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 nm is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500 K and shown to originate from recombination within the ZnO.

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mentioning

confidence: 99%

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Alivov

Kalinina

Cherenkov

et al. 2003

Applied Physics Letters

Self Cite

455

164

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“…For the past few years, the lasing characteristics in ZnO films [1,2] and powders [3] have been widely investigated. These studies, along with the discovery and understanding of single nanowire lasers [4], have led to a number of investigations pertaining to the growth and characterization of ZnO microcavity lasers [5,6].…”

Section: Introductionmentioning

confidence: 99%

Optical injection probing of single ZnO tetrapod lasers

Szarko¹,

Song²,

Blackledge³

et al. 2005

Chemical Physics Letters

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The properties of zinc oxide (ZnO) nanotetrapod lasers are characterized by a novel ultrafast two-color pump/stimulated emission probe technique. Single legs of tetrapod species are isolated by a microscope objective, pumped by 267 nm pulses, and subjected to a time-delayed 400 nm optical injection pulse, which permits investigation of the ultrafast carrier dynamics in the nanosize materials. With the optical injection pulse included, a large increase in the stimulated emission at 400 nm occurs, which partially depletes the carriers at this wavelength and competes with the normal 390 nm lasing. At the 390 nm lasing wavelengths, the optical injection causes a decrease in the stimulated emission due to the energetic redistribution of the excited carrier depletion, which occurs considerably within the time scale of the subpicosecond duration of the injection pulse. The effects of the optical injection on the spectral gain are employed to probe the lasing dynamics, which shows that the full width at half maximum of the lasing time is 3 ps. * Corresponding

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“…However, there is a revival of interest in the materials because of their potential applications in optoelectronic devices employing excitonic effects in the short wavelength range, due to their large exciton binding energy, etc. Among them, ZnO has rapidly emerged as a promising analog to GaN, after the demonstration of the excitonic emission at elevated temperatures up to 550 K (Bagnall et al, 1998). Despite considerable success in optimizing the growth conditions and structural quality such as the fabrication of blue photoemitters (Tsukazaki et al, 2005), ZnO epilayers still contain a number of defects.…”

Section: Dislocations In Wide Gap Semiconductorsmentioning

confidence: 99%