High temperature electronic properties of BaTiO3 – Bi(Zn1/2Ti1/2)O3 – BiInO3 for capacitor applications

Abstract

Solid solutions xBaTiO 3 -(1-x)(0.5Bi(Zn 1/2 Ti 1/2 )O 3 -0.5BiInO 3 ), where x00.95-0.60, were prepared by conventional mixed oxide method. The single phase perovskite structure was obtained for the composition with x≥ 0.75. Phase transformation from tetragonal to pseudocubic was observed from x-ray diffraction patterns when x decreased from 0.95 to 0.75. In tetragonal phase region, x≥0.90, the increase of Bi(Zn 1/2 Ti 1/2 )O 3 -BiInO 3 content decreased the tetragonality and the temperature at which the relative permittivity is maximum (T max ). The increase in lattice parameter and T max were observed in the pseudocubic phase region, x< 0.90. Additionally, a highly broad and diffuse phase transition was observed from the dielectric data in the pseudocubic phase region. The introduction of Ba vacancies in compositions with x00.80 and 0.75 also improved dielectric loss at high temperatures. The incorporation of BiInO 3 into the BaTiO 3 -Bi(Zn 1/2 Ti 1/2 )O 3 compound was also found to improve the temperature coefficient of the relative permittivity, with values as low as approximately −1,000 ppm/K. Overall, ternary perovskite solid solutions based on adding Bi(Zn 1/2 Ti 1/2 )O 3 -BiInO 3 to BaTiO 3 shows excellent potential for high temperature capacitor applications Keywords High temperature capacitor . Bi-based perovskite .

Relationship between tolerance factor and temperature coefficient of permittivity of temperature-stable high permittivity BaTiO3–Bi(Me)O3 compounds

“…All samples were prepared by using the solid state reaction technique. 17 The dielectric data from previous studies were utilized for further analysis, including measurements at various frequencies from room temperature up to 500 C. [17][18][19] The dielectric properties of these solid solutions exhibited a broad and diffuse dielectric peak and it was shown previously that minor modification by the introduction of Ba vacancies could improve the dielectric properties and insulation resistance of the materials. 18 Thus, all compounds selected in this study were nominally A-site nonstoichiometric with a batch composition fixed at 0.02 mol Ba-deficient.…”

High temperature dielectric ceramics: a review of temperature-stable high-permittivity perovskites

“…A dielectric study of the (1-x)[0.5Bi(Zn1/2Ti1/2)O3-0.5BiInO3]-xBaTIO3 ceramic system conducted by Raengthon and Cann revealed a broad and temperature stable dielectric response for compositions x = 0.75 and 0.8 [36]. The estimated values interpolated from published plots for composition x = 0.75 were, r mid ~ 1050±15% from 20ºC to 500ºC with tan ≤ 0.05 from 50 to 390ºC.…”

Synthesis and electrical properties of BaBiO3 and high resistivity BaTiO3–BaBiO3 ceramics

“…18 At the same time, it may also help understand the defect chemistry of BT-Bi(Me) O 3 class of ceramics (excellent candidates for high temperature and high energy density dielectrics. 19,20 ) as BB has been found to exist as an intermediate phase during processing and can potentially influence defect equilibrium conditions owing to multivalent bismuth. 21 In this paper, BT-BB solid solutions were prepared with small mole fractions of BB to study the resultant dielectric and transport properties.…”