High temperature cracking of tungsten polycide films on quartz substrate

Photocatalytic TiO2 thin films prepared via a high-pressure crystallization process

“…2(c) that with 600 • C annealing under atmospheric pressure, cracks are formed randomly on the film surface and the microstructure of the thin films appears porous. The cracking is considered to be owning to the stress caused by uneven thermal expansion, and the interfacial roughening as well as voids formed during high-temperature annealing [16]. The above results indicate that the formation of undesired cracks on the surface of TiO 2 thin films is effectively avoided via the HPC process.…”

Eliminating WSi x peeling in a polycide process by an amorphization technique of ion implantation

“…4) However, WSi x films display a large tensile stress which can reach ∼10 10 MPa. 5,6) Furthermore, the great difference of the thermal expansion coefficients between WSi x films and polysilicon will cause additional stress in the subsequent high-temperature processes, such as spacer anneal and source/drain (S/D) drive-in. Thus, cracking and peeling of the WSi x film often happens and is probably the most important yield and reliability issue for the WSi x polycide process.…”