High temperature characterization of Pt‐based Schottky diodes on AlGaN/GaN heterostructures

Pedrós, J.; Cuerdo, R.; Lossy, R.; Chaturvedi, Nidhi; Würfl, Joachim; Calle, F.

doi:10.1002/pssc.200565225

Cited by 12 publications

(7 citation statements)

References 9 publications

(11 reference statements)

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“…The Schottky barrier height and leakage properties of the Schottky contacts determine which contacts will provide the best gate control in AlGaN/GaN HEMTs. Ni-based and Pt-based Schottky diodes are the most commonly used gate structures for AlGaN/GaN HEMTs [1,[8][9][10][11][12][13][14][15][16][17][18][19]. Pt-based Schottky diodes attracted recent interests for their applications in hydrogen sensors [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Ofuonye

Lee

Yan

et al. 2014

Semicond. Sci. Technol.

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High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500 °C for 2 min. Similar trends were observed for Ni/Pt/Au Schottky diodes. Thermal stability study for these devices showed that the interposition of Pt in Ni/Au systems improved the characteristics of the Schottky diodes after short-term anneal but cause significant degradation after long-term anneal at 500 °C. Ni/Au Schottky contacts exhibited excellent leakage response under thermal annealing for long periods. Microstructural studies were carried out on Ni/Pt/Au and Ni/Au Schottky contacts to elucidate the role of the Pt interlayer in the degradation of the Ni/Pt/Au metallization under longterm thermal anneal.

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Section: Introductionmentioning

confidence: 99%

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Ofuonye

Lee

Yan

et al. 2014

Semicond. Sci. Technol.

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“…15 The presence of an intermediate Ti layer, which attenuates the Au-Pt interaction, further improves the thermal stability of AlGaN/GaN devices. [15][16][17] Pt/Ti/Pt/Au Ohmic contacts were used for AlGaAs/GaAs heterojunction bipolar transistors to achieve a lower contact resistance, due to the reaction of GaAs and Pt to form PtAs 2 . 17 In addition, the control of threshold voltage to fabricate enhancement ͑E͒ mode HEMTs has been realized by using buried platinumgate technology in the InAlAs/InGaAs/InP systems.…”

Section: Introductionmentioning

confidence: 99%

Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors

Liu

Kang

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inEffects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes Appl. Phys. Lett. 105, 083501 (2014); 10.1063/1.4894093 Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures J. Vac. Sci. Technol. B 29, 021002 (2011); 10.1116/1.3545811 120 -nm -T-shaped-Mo ∕ Pt ∕ Au -gate Al Ga N ∕ Ga N high electron mobility transistors J. Vac. Sci. Technol. B 23, L13 (2005); 10.1116/1.2013315 Effect of thermal annealing on 120 nm -T-shaped-Ti ∕ Pt ∕ Au -gate Al Ga N ∕ Ga N high electron mobility transistors J.We have demonstrated significant improvements of AlGaN/GaN high electron mobility transistors ͑HEMTs͒ dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ϳ−45 to Ϫ65 V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to Ϫ100 V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by ϳ15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.56 ϫ 10 8 . The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.16ϫ 10 7 at V DS = 5 V and 6.29ϫ 10 5 V DS = 40 V due to the larger gate leakage current at higher drain bias voltage.

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“…To date, in order to reduce the reverse-biased leakage current in Schottky contacts, incorporating a Schottky metal possessing high work function, such as Au (5.1 eV), Pd (5.12 eV), Ni (5.15 eV), or Pt (5.65 eV), is a common method of maximizing the effective SBH of the metal/n-GaN, metal/AlInN/GaN, or metal/AlGaN/GaN HEMT contacts. [17][18][19][20][21][22] However, these studies are not enough for high quality Schottky contacts on GaN-based materials. Further improvement should be done.…”

Section: Introductionmentioning

confidence: 99%

Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer

Arslan

Altındal

Ural

et al. 2018

Journal of Elec Materi

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contacts were placed on a quaternary Al 0.84 In 0.13 Ga 0.03 N epilayer. The electrical and structural properties of the asdeposited Pt/Au, Ni/Au, Ni/Pt/Au and annealed Ni/Pt/Au Schottky contacts were investigated as a function of annealing temperature using currentvoltage (I-V), capacitance-voltage (C-V), and high resolution x-ray diffraction measurements (HR-XRD). According to the I-V, Norde, and C-V methods, the highest Schottky barrier height (SBH) was obtained for the Pt/Au (0.82 eV (I-V), 0.83 eV (Norde), and 1.09 eV (C-V)) contacts when they were compared with the other as-deposited Schottky contacts. The estimated SBH of the annealed Ni/Pt/Au Schottky contacts, calculated from the I-V results, were 0.80 eV, 0.79 eV, and 0.78 eV at 300°C, 400°C, and 500°C, respectively. The SBH decreases with an increase in the annealing temperature up to 500°C compared with that of the as-deposited Ni/Pt/Au Schottky contact. The observed extra peaks in the annealed samples confirm the formation of a new interfacial phase at the interface. However, the diffraction patterns of the annealed Schottky contacts did not change as a function of the annealing temperature. The higher ideality factors values were obtained for as-deposited Pt/Au (5.69), Ni/Au (6.09), and Ni/Pt/Au (6.42) Schottky contacts and annealed Ni/Pt/Au (6.42) Schottky contacts at 300°C (6.89), 400°C (7.43), and 500°C (8.04). The higher n results can be attributed to current-transport mechanisms other than thermionic emission, such as dislocation related tunneling.

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High temperature characterization of Pt‐based Schottky diodes on AlGaN/GaN heterostructures

Cited by 12 publications

References 9 publications

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors

Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer

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