High temperature catalytic metal field effect transistors for industrial applications

Spetz, Anita Lloyd; Tobias, Peter S.; Unéus, Lars; Svenningstorp, Henrik; Ekedahl, Lars-Gunnar; Lundström, Ingemar

doi:10.1016/s0925-4005(00)00559-1

Cited by 80 publications

(8 citation statements)

References 19 publications

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“…An additional attractive attribute of GaN and SiC is the fact that gas sensors based on this material could be integrated with high temperature electronic devices on the same chip. While there has been extensive development of SiC-based gas sensors [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25], the work on GaN is at an earlier stage [26,27], but there has been much recent activity based on the relative advantages of GaN for sensing [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. These advantages include the presence of the polarization-induced charge, the availability of a heterostructure and the more rapid pace of device technology development for GaN which borrows from the commercialized light-emitting diode and laser diode businesses.…”

Section: Introductionmentioning

confidence: 99%

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Pearton

Kang

Kim

et al. 2004

J. Phys.: Condens. Matter

292

156

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There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to central monitoring locations. We discuss the advances in use of GaN-based solid-state sensors for these applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization-induced two-dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors to detect gases, polar liquids and mechanical pressure. AlGaN/GaN HEMT structures have been demonstrated to exhibit large changes in source–drain current upon exposing the gate region to various block co-polymer solutions. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H2. Of particular interest is detection of ethylene (C2H4), which has strong double bonds and hence is difficult to dissociate at modest temperatures. Apart from combustion gas sensing, the AlGaN/GaN heterostructure devices can be used as sensitive detectors of pressure changes. In addition, large changes in source–drain current of the AlGaN/GaN HEMT sensors can be detected upon adsorption of biological species on the semiconductor surface. Finally, the nitrides provide an ideal platform for fabrication of surface acoustic wave (SAW) devices. The GaN-based devices thus appear promising for a wide range of chemical, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications. In addition, the sensors are compatible with high bit-rate wireless communication systems that facilitate their use in remote arrays.

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Section: Introductionmentioning

confidence: 99%

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Pearton

Kang

Kim

et al. 2004

J. Phys.: Condens. Matter

292

156

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“…There is strong current interest in the development of lightweight hydrogen sensors capable of ppm sensitivity and extended operation at low power levels [ 4 - 6 , 11 , 13 ]. The applications for these sensors include combustion gas detection in spacecraft and solid oxide fuel cells with proton-exchange membranes (PEM).…”

Section: Sensors Based On Algan/gan Heterostructuresmentioning

confidence: 99%

Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

Kang

Wang

Tien

et al. 2006

Sensors

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Abstract:In this review we discuss the advances in use of GaN and ZnO-based solid-state sensors for gas sensing applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization -induced two dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of gases. Pt-gated GaN Schottky diodes and Sc 2 O 3 /AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H 2 containing ambients. Of particular interest are methods for detecting ethylene (C 2 H 4 ), which offers problems because of its strong double bonds and hence the difficulty in dissociating it at modest temperatures. ZnO nanorods offer large surface area, are bio-safe and offer excellent gas sensing characteristics.

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“…Of late, hydrogen has been established as a promising, clean, renewable, and pollution-free alternative energy source 1 and found applications in several fields such as spacecraft, transportation, and petrochemical plants. 2,3 However, hydrogen gas poses certain safety concerns because it is odorless, highly volatile, explosive, invisible, and extremely reactive with oxygen. 4 In H 2 applications, the safety during transportation, storage, and usage is crucial.…”

Section: Introductionmentioning

confidence: 99%

Twofold Porosity and Surface Functionalization Effect on Pt–Porous GaN for High-Performance H₂-Gas Sensors at Room Temperature

et al. 2019

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The achievement of H 2 detection, up to 25 ppm, at room temperature using sulfur-treated, platinum (Pt)-decorated porous GaN is reported in this study. This achievement is attributed to the large lateral pore size, Pt catalyst, and surface treatment using organic sulfide. The performance of H 2 -gas sensors is studied as a function of the operating temperature by providing an adsorption activation energy of 22 meV at 30 ppm H 2 , confirming the higher sensitivity of the sulfide-treated Pt–porous GaN sensor. Furthermore, the sensing response of the sulfide-treated Pt–porous GaN gas sensor increases with the increase in porosity (surface-to-volume ratio) and pore radii. Using the Knudsen diffusion–surface reaction equation, the H 2 gas concentration profile is simulated and fitted within the porous GaN layer, revealing that H 2 diffusion is limited by small pore radii because of its low diffusion rate. The simulated gas sensor responses to H 2 versus the pore diameter show the same trend as observed for the experimental data. The sulfide-treated Pt–porous GaN sensor achieves ultrasensitive H 2 detection at room temperature for 125 nm pore radii.

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High temperature catalytic metal field effect transistors for industrial applications

Cited by 80 publications

References 19 publications

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

Twofold Porosity and Surface Functionalization Effect on Pt–Porous GaN for High-Performance H₂-Gas Sensors at Room Temperature

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High temperature catalytic metal field effect transistors for industrial applications

Cited by 80 publications

References 19 publications

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

Twofold Porosity and Surface Functionalization Effect on Pt–Porous GaN for High-Performance H2-Gas Sensors at Room Temperature

Contact Info

Product

Resources

About

Twofold Porosity and Surface Functionalization Effect on Pt–Porous GaN for High-Performance H₂-Gas Sensors at Room Temperature