High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Abstract

International audience4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N+ substrate using a JTE as edge termination. A breakdown voltage higher than 3.5 kV has been measured on 0.16 and 2.56 mm2 diodes. The leakage current in the 25°C-300°C temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm2 diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300°C

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

“…As shown as example in Fig. , the maximum allowable current density of GaN 4.7 kV p–n diode is 90 A cm −2 , and its corresponding voltage is 3.36 V. The latter voltage, however, is comparable to that of a 4H‐SiC 3.5 kV junction‐barrier Schottky diode, i.e., 3.12 V . With respect to the characteristics of 6.5 kV insulated‐gate bipolar transistors (IGBTs), GaN devices might also have little room to compete against 4H‐SiC devices (Fig.…”

“…Reported current–voltage characteristics of 4.7 kV GaN p–n diode , 4H‐SiC 3.5 kV junction barrier Schottky diode , and 4H‐SiC 6.5 kV insulated‐gate bipolar transistor , together with a curve showing the power dissipation‐limit of a semiconductor package, 300 W cm −2 .…”

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

“…[1][2][3][4] One SiC-based power device employed in power rectifier circuits is the diode which is categorized into Schottky barrier diode (SBD), p-i-n diode and junction barrier Schottky (JBS) diode. [5][6][7][8][9][10][11][12][13][14][15][16][17][18] SBD has a high switching speed because of its low threshold voltage but has a low breakdown voltage and high leakage current. On the other hand, p-i-n diodes can operate at high-bias and have low leakage current but also have large reverse-recovery current, whereas the JBS diode is designed to have similar characteristics with SBD in the forward-bias condition but with the p-i-n diode in the reverse bias condition.…”

Traction Inverter that Applies Hybrid Module Using 3‐kV SiC‐SBDs and High‐Speed Drive Circuit

“…On the other hand, SiC‐SBD is a unipolar device driven by electron current only. Thus, there is no recovery current, and the recovery loss and the turn‐on loss are expected to be greatly reduced .…”