High-Temperature Annealing Assisted High-Quality Semipolar (112̅2) AlN Film for Vacuum Ultraviolet Detectors

Abstract

High-temperature annealing (HTA) has been recognized as an available method to annihilate the domain boundaries and improve the crystalline quality of AlN films. Here, semipolar (112̅2) AlN films through the HTA process are utilized to prepare the vacuum ultraviolet photodetectors (VUV PDs). The resulting semipolar AlN films show full widths at half-maximum of the high-resolution X-ray rocking curves that are 527 and 622 arcsec along [112̅3̅]AlN and [11̅00]AlN, respectively, which illustrates much improved crystalline quality compared to previous reports. HTA not only renders markedly improved AlN quality but also reduces the in-plane anisotropic characteristic. The responsivities of regrown AlN PD and direct-grown-AlN PD are 2.23 and 1.33 A/W at 20 V, respectively. The improvement in the responsivity and specific detectivity of PDs is attributed to the reduction of crystal mosaicity and stacking faults of semipolar (112̅2) AlN using HTA technology. These results have confirmed that the HTA strategy is significant for the improvement of semipolar (112̅2) AlN films and VUV PDs.

Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes

“…With a wide band gap of 6.2 eV, AlN is expected to be one of the most suitable semiconductor materials for high-power and high-temperature electronics and deep ultraviolet (UV) optoelectronics. , Among various power devices, Schottky barrier diodes (SBDs) are notable for their short reverse recovery time, low switching losses, and simple structure . Additionally, Schottky contacts play a crucial role in other AlN-based devices, including photodetectors, high electron mobility transistors, and insulated gate bipolar transistors .…”