High-temperature annealing and optical activation of Eu-implanted GaN

Lorenz, K.; Wahl, Ulrich; Alves, E.; Dalmasso, S.; Martin, Robert; O'Donnell, K.P.; Ruffenach, Sandra; Briot, Olivier

doi:10.1063/1.1801686

Cited by 68 publications

(58 citation statements)

References 14 publications

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“…In a previous study Eu was implanted under the same conditions through an epitaxial AlNlayer that was grown on top of the GaN; due to the presence of the cap, post-implant annealing could be performed up to 1300 ºC in N 2 without dissociation of the sample [3]. However, even for this temperature the implantation damage could not be fully removed.…”

Section: Resultsmentioning

confidence: 99%

“…However, for GaN this method still suffers from the incomplete annealing of the resultant lattice damage and the dissociation of the surface at high temperatures [2]. It was shown previously that the emission intensity of Eu-implanted GaN increases strongly with rising annealing temperature [3]. However, higher annealing temperatures require an increase of the partial nitrogen pressure to suppress the loss of N from the sample.…”

Section: Introductionmentioning

confidence: 99%

“…To prevent surface dissociation, several approaches were reported in literature including the use of a proximity cap (i.e. a piece of unimplanted GaN placed face to face with the sample), the predeposition of a capping layer or the annealing in high N 2 overpressures [2][3][4]. The annealing atmosphere can influence the stability of the surface and thus the recovery of the crystal.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Lorenz¹,

Nogales

Nédélec

et al. 2005

MRS Proc.

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GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ºC in vacuum, in flowing nitrogen gas or a mixture of NH 3 and N 2 . Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N 2 already show the first signs of surface dissociation at 1000 ºC. At higher temperature, Ga droplets form at the surface. However, samples annealed in NH 3 +N 2 exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 ºC in NH 3 +N 2 the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Lorenz¹,

Nogales

Nédélec

et al. 2005

MRS Proc.

Self Cite

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] In particular, the large band gaps of GaN, AlN, and their alloys allow emission of higher energy rare earth transitions that are otherwise absorbed in smaller band gap host materials. Therefore, these materials may have application in visible displays or in white light systems that employ color-combining techniques.…”

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confidence: 99%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

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Deep ultraviolet emission from gadolinium ͑Gd͒-implanted AlN thin films has been observed using photoluminescence ͑PL͒ spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ϳ6 ϫ 10 14 cm −2 . Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

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“…The structural properties of the samples and the increased optical activation of the Eu ions compared to samples annealed at low temperature were reported previously. 11 PL and PLE spectra were recorded from samples maintained at approximately 15 K in a closed-cycle helium cryostat. The luminescence was analyzed by a 0.67 m focal length monochromator and detected using a cooled photomultiplier tube.…”

mentioning

confidence: 99%

Selectively excited photoluminescence from Eu-implanted GaN

Wang

Martin

O’Donnell

et al. 2005

Applied Physics Letters

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The intensity of Eu-related luminescence from ion-implanted GaN with a 10nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300°C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to D05-F27 (∼622nm), D05-F37 (∼664nm), and D05-F17 (∼602nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the D05-F27 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356nm, and a broad subedge absorption band centred at ∼385nm. Marked differences in the shape of the D05-F27 PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.

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High-temperature annealing and optical activation of Eu-implanted GaN

Cited by 68 publications

References 14 publications

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Selectively excited photoluminescence from Eu-implanted GaN

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