High-temperature and self-heating effects in fully depleted SOI MOSFETs

Goel, Ashok K.; Tan, Terrence H.

doi:10.1016/j.mejo.2006.01.006

Cited by 41 publications

(11 citation statements)

References 11 publications

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“…Temperature behavior is also shown in Fig. 3 where the well known ZT C points [11] are clearly manifested and follow the scaling trend of classical FD SOI [12]. Threshold voltage is extracted for these devices as a function of temperature.…”

Section: Scaling and High Temperature Behaviormentioning

confidence: 71%

DC and RF temperature behavior of deep submicron Graded Channel MOSFETs

Emam

Kumar

Ida

et al. 2009

2009 IEEE International SOI Conference

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The superior performance of Graded-Channel MOSFET over classical MOSFET transistors is demonstrated to extend to down scaled channel lengths. While keeping a normal down scaling trend, Graded-Channel devices continue to show favoured static and analog performances in comparison to classical devices. Graded-Channel devices are also characterized in high temperature and high frequency regimes of operation.

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Section: Scaling and High Temperature Behaviormentioning

confidence: 71%

DC and RF temperature behavior of deep submicron Graded Channel MOSFETs

Emam

Kumar

Ida

et al. 2009

2009 IEEE International SOI Conference

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“…Then V TH shift will happen accordingly. [10,[13][14][15] To further confirm that the anomalous V TH shift is induced by self-heating effect, pulse mode measurement is carried out. As is shown in Fig 5(a), no matter which mode is chose, there is no V TH variation as long as the channel width is relatively small.…”

Section: Methodsmentioning

confidence: 99%

“…And this large current will produce a large amount of Joule Heat [13,15]. What's more, the thermal conductivities of IGZO and SiO 2 are much lower than Si [10,[13][14]. As a result, a severe self-heating effect will be occurred in channel layer because of the heat accumulation [13].…”

mentioning

confidence: 99%

P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched a‐IGZO TFTs

Yang

Zhou

Zhang

2018

Symp Digest of Tech Papers

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The back‐channel‐etched (BCE) amorphous InGaZnO thin‐film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self‐heating effect can be used to account for this anomalous dependence of VTH on W and VD.

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“…Electronic components for space, telecommunications, and other special equipment degrade under the action of external factors, in particular temperature and radiation, which in turn reduces the reliability and durability of the equipment and may cause malfunctions and/or failures [1] [3]. To determine the temperature-and radiation-dependent parameters of a device model, a set of electrical characteristics is required that is obtained by special tests on the ground [4].…”

Section: Introductionmentioning

confidence: 99%

Complex for automated measurement and processing of BJTs and MOSFETs characteristics for extremal applications

Petrosyants

Kharitonov

Sambursky

et al. 2016

2016 International Siberian Conference on Control and Communications (SIBCON)

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The paper describes the features of an automated system for measurement and processing of electrical characteristics of BJTs and MOS transistors in the presence of thermal and radiation effects. Automation is made possible with employing of long measurement cables and a ramified scripting system. The system is based on a set of measuring instruments, methods of measurements and processing of results for transistors of various types. Shown are the examples of the system usage for studying BJTs and MOSFETs, determining the SPICE-model parameters.

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High-temperature and self-heating effects in fully depleted SOI MOSFETs

Cited by 41 publications

References 11 publications

DC and RF temperature behavior of deep submicron Graded Channel MOSFETs

DC and RF temperature behavior of deep submicron Graded Channel MOSFETs

P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched a‐IGZO TFTs

Complex for automated measurement and processing of BJTs and MOSFETs characteristics for extremal applications

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