2019
DOI: 10.1016/j.chemphys.2019.110399
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High-temperature and high-pressure thermophysical properties of AlP semiconducting material: A systematic ab initio study

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Cited by 15 publications
(2 citation statements)
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“…The Vickers hardness HV and the shear modulus G are related by the empirical formula given as: HV = 0.1475 × G [51,52]. It is well known that the microhardness of a material change considerably as a function of dislocation density [53]. The values estimated at room temperature of the shear modulus G and the Vickers hardness HV for LaxSm1-xS (x = 0, 0.1, 0.25 and 0.35) alloys depending on the doping concentration of La are also traced in Figure 2.…”
Section: Theory and Discussion Of The Resultsmentioning
confidence: 99%
“…The Vickers hardness HV and the shear modulus G are related by the empirical formula given as: HV = 0.1475 × G [51,52]. It is well known that the microhardness of a material change considerably as a function of dislocation density [53]. The values estimated at room temperature of the shear modulus G and the Vickers hardness HV for LaxSm1-xS (x = 0, 0.1, 0.25 and 0.35) alloys depending on the doping concentration of La are also traced in Figure 2.…”
Section: Theory and Discussion Of The Resultsmentioning
confidence: 99%
“…The minimum value of H was found to be 4.45 GPa for both B0.5Al0.5Sb and B0.625Al0.375Sb semiconducting alloys. Experimentally, the microhardness H of solid is infected with the density defects existing in the material [36]. Several techniques were usually used to characterize the defects in the solids, such as transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), and timeof-flight secondary ion mass spectrometry (TOF-SIMS) [13].…”
Section: Theory Results and Discussionmentioning
confidence: 99%