High‐Strain Lead‐free Antiferroelectric Electrostrictors

Zhang, Shan‐Tao; Kounga, Alain Brice; Jo, Wook; Jamin, Christine; Seifert, Klaus T. P.; Granzow, Torsten; Rödel, Jürgen; Damjanović, Dragan

doi:10.1002/adma.200901516

Cited by 383 publications

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“…The electric-field-induced transition is the source of functional properties and promising technological applications. Non-linear strain and dielectric responses at the phase switching are useful for transducers and electrooptic applications [4,5]. The shape of the double hysteresis loop suggests applications in high-energy storage capacitors [6,7].…”

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Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

Reyes‐Lillo

Rabe

2013

Phys. Rev. B

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Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of experimentally accessible epitaxial strains -3 % η 4 %. While ferroelectricity is favored for all compressive strains, for tensile strains the small energy difference between the nonpolar ground state and the alternative polar phase yields a robust antiferroelectric ground state. The coexistence of ferroelectricity and antiferroelectricity observed in thin films is attributed to a combination of strain and depolarization field effects. [2,3] in that its structure is obtained through distortion of a nonpolar high-symmetry reference structure; for ferroelectrics the distortion is polar, while for antiferroelectrics it is nonpolar. However, not all nonpolar phases thus obtained are antiferroelectric; in addition, there must be an alternative ferroelectric phase obtained by a polar distortion of the same reference structure, close enough in free energy so that an applied electric field can induce a first-order phase transition from the antiferroelectric to the ferroelectric phase, producing a characteristic polarization-electric field (P-E) double-hysteresis loop. The electric-field-induced transition is the source of functional properties and promising technological applications. Non-linear strain and dielectric responses at the phase switching are useful for transducers and electrooptic applications [4,5]. The shape of the double hysteresis loop suggests applications in high-energy storage capacitors [6,7]. In addition, an effective electro-caloric effect can also be induced in systems with a large entropy change between the two phases [8].Lead zirconate PbZrO 3 (PZO) was the first material identified as antiferroelectric [9]. Despite extensive studies and characterization, PZO continues to offer insights into the origin and complexity of antiferroelectricity [10,11]. In bulk form, PZO has a cubic perovskite structure at high temperatures and a nonpolar orthorhombic ground state below T c ∼ 505 K. The ground state has space group Pbam [12, 13] and unit cell dimensions √ 2a 0 × 2 √ 2a 0 × 2a 0 with respect to the reference lattice constant a 0 . Its distorted perovskite structure is derived from the cubic (C) unit cell through a nonpolar Σ 2 distortion mode of Pb +2 ion displacements in the 110 C direction, combined with oxygen octahedron rotation R − 5 modes around the 110 C axis (a − a − c 0 in Glazer notation). Under an applied electric field, PZO single crystals undergo a first order phase transition into a sequence of polar phases with rhombohedral symmetry [14]. Similar rhombohedral polar phases are observed in the polycrystalline ceramic system Pb(Zr 1−x Ti x )O 3 under small 5-10 % isovalent substitution of zirconium for titanium [15,16]. In thin films, the competition between the rhombohedral low-energy structures and the PZO ground state is less studied. Room temperature ...

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Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

Reyes‐Lillo

Rabe

2013

Phys. Rev. B

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“…Therefore, one may adjust the composition or dopants in lead-free relaxor ferroelectrics to produce pseudocubic/cubic crystal structure at RT, which might produce good lead-free electrostrictors. Recently reported electrostrictors, ͑Sr 1−y−x Na y Bi x ͒TiO 3 and Bi 0.5 Na 0.5 TiO 3 -BaTiO 3 -K 0.5 Na 0.5 NbO 3 ͑BNT-BT-KNN͒, have the above mentioned features of relaxor characteristics, such as paraelectric state and pseudocubic structure at RT,7,8 as evidenced by frequency dependent relative dielectric constant ͑ r ͒ and dielectric loss ͑tan ␦͒, x-ray diffraction ͑XRD͒ patterns, and almost linear polarization-electric field ͑P-E͒ profiles.There is a ferroelectric-antiferroelectric phase transition in lead-free BNT-based ferroelectrics. Proper substitutions can help decrease the phase transition temperature to near RT, and enhance the relaxor behavior at RT.…”

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Phase diagram and electrostrictive properties of Bi0.5Na0.5TiO3–BaTiO3–K0.5Na0.5NbO3 ceramics

Zhang

Yan

Yang

et al. 2010

Applied Physics Letters

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Phase diagram of Bi 0.5 Na 0.5 TiO 3 -BaTiO 3 -K 0.5 Na 0.5 NbO 3 ternary system has been analyzed and ͑0.94− x͒BNT-0.06BT-xKNN ͑0.15Յ x Յ 0.30͒ ceramics have been prepared and investigated. Pseudocubic structures were confirmed by x-ray diffractions and its preliminary Rietveld refinements. P-E, S-E, and S-P 2 profiles ͑where P, E, and S denote polarization, electric field, and strain, respectively͒ indicate electrostrictive behavior of all ceramics. The compositions with x = 0.20 and 0.25 show pure electrostrictive characteristics. The dissipation energy, electrostrictive strain, and electrostrictive coefficient have been determined and compared with other lead-free and lead-containing electrostrictors. The electrostrictive coefficient can reach as high as 0.026 m 4 / C 2 , about 1.5 times of the value of traditional Pb-based electrostrictors. © 2010 American Institute of Physics. ͓doi:10.1063/1.3491839͔Both electrostrictive and piezoelectric ceramics are commercially used in electromechanical devices, such as actuators, space mirrors, etc. Electrostrictors have special advantages over piezoelectrics, because they do not require poling process and there is negligible hysteresis in strain-electric field ͑S-E͒ cycle, which is important for precision position control. [1][2][3] In electrostriction, the sign of the field-induced deformation is independent of the polarity of the field and is proportional to the square of the applied electric fieldwhere Q is the electrostrictive coefficient and P is polarization. 2 In recent years, a lot of attention has been paid to leadfree piezoelectric materials 4,5 but much less effort was devoted to high-performance lead-free electrostrictors. 6-9 One of the reasons might be due to the much smaller commercial market for high performance electrostrictors than for piezoelectric devices. Another reason might be due to the lack of public awareness on the fact that most of currently used electrostrictors are also lead based materials. With increasing pressure from environmental legislations, lead-free piezoelectric and electrostrictive materials are urgently in demand. Therefore, it is just as important to study lead-free electrostrictive materials as lead-free piezoelectric materials.Electrostriction is a general property of all dielectric materials but it is significantly large in ferroelectrics just above the Curie temperature ͑T c ͒, where an electric field can induce energetically unstable ferroelectric phase. In relaxor ferroelectrics, the electrostrictive strain can be kept at a relatively high level in a wide temperature range, because of the diffused phase transition. 2 If the phase transition temperature of a relaxor ferroelectrics is close to room temperature ͑RT͒, the electrostrictive effect can be very large at RT. Therefore, one may adjust the composition or dopants in lead-free relaxor ferroelectrics to produce pseudocubic/cubic crystal structure at RT, which might produce good lead-free electrostrictors. Recently reported electrostrictors, ͑Sr 1−y−x Na y Bi x ͒Ti...

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“…Furthermore, it is highly comparable to that of lead-based single crystals (Figures 1d and e). 4,21,[25][26][27][28][29][30] Figure 2a presents a representative microstructure of an as-sintered RTGG specimen demonstrating a high degree of texture. It is interesting to see that every grain, without exception, shows clear ferroelectric domain contrast.…”

Section: Resultsmentioning

confidence: 99%

“…4,[18][19][20] It is known that (Bi 1/2 Na 1/2 )TiO 3 -based incipient piezoceramics exhibit a comparatively high electrostrictive coefficient. 18,21 To observe this effect as clearly as possible, we chose the ceramic 0.97Bi 1/2 (Na 0.78 K 0.22 ) 1/2 TiO 3 -0.03BiAlO 3 (BNKT-BA). 22 This ceramic has moderate IPS, which therefore has room for further enhancement by the application of the currently proposed methodology.…”

Section: Introductionmentioning

confidence: 99%

Forced electrostriction by constraining polarization switching enhances the electromechanical strain properties of incipient piezoceramics

et al. 2017

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Recently developed lead-free incipient piezoceramics are promising candidates for off-resonance actuator applications due to their exceptionally large electromechanical strains. Their commercialization currently faces three critical challenges: the high driving electric field required for delivering the potentially large strains; large strain hysteresis, which is inappropriate for precision devices; and relatively high temperature dependencies. We propose that instead of utilizing incipient piezoelectric strains, harnessing the maximum possible electrostriction would provide a highly effective way to resolve all these challenges. This concept was experimentally demonstrated using textured 0.97Bi 1/2 (Na 0.78 K 0.22 ) 1/2 TiO 3 -0.03BiAlO 3 as an exemplary incipient piezoceramic, whereby texturing was achieved using a reactive templated grain-growth technique. The manufactured textured ceramic is characterized by S max /E max of 995 pm V − 1 and an electrostrictive coefficient, Q 33 , of 0.049 m 4 C − 2 . Both these parameters are as large as those of single crystals. The current work presents a significant advancement in the field of lead-free ceramics and can guide future efforts in this direction. In addition, the concept presented here can be easily transferred to other disciplines involving the design of functional properties of various materials. NPG Asia Materials (2017) 9, e346; doi:10.1038/am.2016.210; published online 27 January 2017 INTRODUCTIONSince the first report on incipient piezoelectric strain (IPS) in a (Bi 1/2 Na 1/2 )TiO 3 (BNT)-based lead-free ceramic, 1 there have been numerous attempts to enhance the strain properties of these materials. These studies have concluded that IPS is a common feature of relaxor ferroelectrics as long as their freezing temperature is below room temperature, that is, they are in the ergodic relaxor state, whereas ferroelectric long-range order is only stable under the application of a certain or higher electric field. 2-4 It should be noted that the electric-field-induced strain in a normal ferroelectric material is approximately half the strain inherently available for the given system. This result is due to the presence of the remanent state, which typically occupies~0.1% of the entire phase. 2 Piezoelectric strain commonly refers to the difference between the maximum and remanent strain levels, and it may be greatly enhanced by minimizing the remanent strain, as is the case for IPS.Thus far, most useful IPSs have been found in relaxor ferroelectrics, 3,5 indicating that the inherently large poling field, E pol , (poling field: an electric field required for inducing ferroelectric state out of the existing relaxor state, determined at the inflection point of the electric-field-dependent strain curve as illustrated

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High‐Strain Lead‐free Antiferroelectric Electrostrictors

Cited by 383 publications

References 23 publications

Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

Phase diagram and electrostrictive properties of Bi0.5Na0.5TiO3–BaTiO3–K0.5Na0.5NbO3 ceramics

Forced electrostriction by constraining polarization switching enhances the electromechanical strain properties of incipient piezoceramics

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