High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy

Emeis, N.; Schier, M.; Hoffmann, Lars; Heinecke, H.; Baur, B.

doi:10.1049/el:19920215

Cited by 16 publications

(4 citation statements)

References 1 publication

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“…Measurements of the power absorbed are made by integrating the resistive heating term over the entire absorbing region as calculated from the simulations. The resulting simulations produced very similar, periodic results to [9]. An optimum layer thickness of 1.8 µm was chosen for the absorbing layer to maximize absorption, reduce the sensitivity to thickness variations, and increase fabrication yield.…”

Section: Designmentioning

confidence: 85%

“…Photodetectors are analyzed using the COMSOL Multiphysics finite element analysis software package to simulate optical propagation and absorption of 1550 nm radiation through the structure. It is expected that absorption from waveguide into the absorbing layer (InGaAs) is dependant on its thicknesses and that there is an ideal dimension for this intrinsic layer [9]. The simulations follow the structure shown in Figure 3 with a varying InGaAs thickness.…”

Section: Designmentioning

confidence: 89%

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Indium Phosphide Resonant Chemical Sensor with a Monolithically Integrated Optical Readout Scheme

et al. 2007

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We present a novel MEMS cantilever waveguide resonator sensing platform utilizing for the first time an integrated photodiode readout scheme. This platform uses Indium Phosphide (InP) to enable the monolithic integration of passive waveguides with active optical components. Cantilever waveguide resonators were successfully fabricated with integrated PIN photodiodes for displacement measurement. On-chip integration of the readout provides a 70% improvement in mass sensitivity compared to off-chip photodetector designs.We have successfully fabricated cantilever waveguides with integrated photodetectors and experimentally characterize these cantilever sensors with monolithically integrated PIN photodiodes.

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Section: Designmentioning

confidence: 85%

Section: Designmentioning

confidence: 89%

Indium Phosphide Resonant Chemical Sensor with a Monolithically Integrated Optical Readout Scheme

et al. 2007

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“…It is expected that absorption from waveguide into the absorbing layer (InGaAs) will be resonant in nature and dependent on its thicknesses. 16 A two dimensional model of our structure was constructed (see Figure 2) with the assumption that that absorption in the InGaAs layer would be the dominant loss mechanism. Absorption was modeled as resistive heating in the COMSOL simulations.…”

Section: Dmmentioning

confidence: 99%

Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

Siwak

Fan

Kanakaraju

et al. 2014

Applied Physics Letters

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An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

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“…As one of the key components, semiconductor photodetectors based on InP materials, which offer the advantages of low dark current, high-efficiency and highspeed operation, have been widely studied for long-wavelength optical fiber communication applications. [1][2][3][4][5][6][7] Therefore, although p-i-n photodetectors do not have internal gain, a combination of a photodetector with an amplification device, such as high electron mobility transistor (HEMT) or heterojunction bipolar transistor (HBT), in optoelectronic integrated circuits (OEIC's) has led high-sensitivity optical receivers to operate for high-rate data transmission. [8][9][10][11][12] In order to achieve these characteristics, it requires a precise control of the thickness and concentration of different epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

Low Dark Current InGaAs(P)/InP p–i–n Photodiodes

Chen

Hsu

et al. 2003

Jpn. J. Appl. Phys.

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Planar InGaAs(P)/InP p-in photodiodes have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). High-quality and uniform epitaxial layers are obtained. It is noted that the InGaAs layer background concentration is as low as 4:5 Â 10 13 cm À3. The dark current is significantly reduced by using a wider-band-gap material of quaternary In x Ga 1Àx As y P 1Ày as a cap layer to reduce the device surface leakage current. In addition, the device becomes highly photosensitive due to the reduction of the absorption of the radiation in the narrow-band-gap In x Ga 1Àx As y P 1Ày cap layer. The p-in photodiode with a wide-band-gap InP cap layer exhibits a dark current as low as 60 pA at À10 V bias, corresponding to a dark current density of 4:2 Â 10 À7 A/cm 2 .

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High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy

Cited by 16 publications

References 1 publication

Indium Phosphide Resonant Chemical Sensor with a Monolithically Integrated Optical Readout Scheme

Indium Phosphide Resonant Chemical Sensor with a Monolithically Integrated Optical Readout Scheme

Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

Low Dark Current InGaAs(P)/InP p–i–n Photodiodes

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