High-Speed Visible Light Communication Using GaN-Based Light-emitting Diodes With Photonic Crystals

Yin, Yu-Feng; Lan, Wan–Hong; Lin, Te-Hsien; Wang, Curtis; Feng, Milton; Huang, Jui Hsien

doi:10.1109/jlt.2016.2634005

Cited by 27 publications

(14 citation statements)

References 24 publications

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“…The modulation bandwidth is determined by the differential carrier lifetime and the RC time constant, where the R is differential resistance and the C is the device capacitance. Due to its ability to sustain high injected current density and its small capacitance, the micro‐size LED can easily reach a high modulation bandwidth in the order of several hundred MHz and is a promising signal emitter in VLC system . However, although the higher current density is beneficial to the higher modulation bandwidth, it leads to worse aging characteristics due to the self‐heating effect .…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Micro‐Size Light‐Emitting Diode for Illumination and Visible Light Communication

Huang

et al. 2018

Physica Status Solidi (a)

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The white light‐emitting diode (LED) modules, in which the GaN‐based blue‐LED chip with 4 × 4 arrayed pixels are packaged with chip‐on‐board technique and welded on a print circuit board, are fabricated for both illumination and visible light communication (VLC). The effects of the mesa size on the characteristic features are explored. It shows that the pixels with small size can sustain high saturated current density. Under the saturated current density, the highest luminous flux of 278.4 lm can be obtained by using the largest pixel of 160 µm‐diameter, or the highest 3‐dB modulation bandwidth of 127.3 MHz can be obtained by using the smallest pixels of 60 µm‐diameter. In case the white‐LED module works for a long time, the injected current density should be far away from the saturated current density. On condition that the 3‐dB modulation bandwidth of 100 MHz is required, the white‐LED module with 100 µm‐diameter pixels is proposed and the luminous flux can reach 164.8 lm. Subsequently, the electrode size is optimized to get higher luminous flux. By enlarging the p‐electrode, the white‐LED module with 120 µm‐diameter pixels can achieve the luminous flux of 235.2 lm while the 3‐dB modulation bandwidth holds 100 MHz.

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Section: Introductionmentioning

confidence: 99%

Characteristics of Micro‐Size Light‐Emitting Diode for Illumination and Visible Light Communication

Huang

et al. 2018

Physica Status Solidi (a)

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“…As the carrier lifetime τ can be expressed by 1/(k r + k nr ), the way to reduce τ without compromising energy conversion efficiency is to improve the carrier recombination rate k r . One way to enhance k r in these semiconductors is to increase the overlap between electron and hole wavefunction in spatial integrals in the active layer of the device via means like tuning lattice strain [22]- [24], or suppressing the quantum confinement stark effect (QCSE) [10], [16], [18], [21], [25], [26].…”

Section: Recent Advances Of the Hardware A Transmitter 1) Led And µLedmentioning

confidence: 99%

Recent Advances in the Hardware of Visible Light Communication

Zhang

Wang

et al. 2019

IEEE Access

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Visible light communication (VLC) is an emerging technology that can transform lighting facilities into access points for wireless communication. Its development is bottlenecked by the cut-off frequencies (e.g., −6-dB electrical cut-off frequency f c and −3-dB electrical cut-off frequency f −3 dB ) of hardware, such as light-emitting diodes (LEDs), color converters, and photodetectors (PDs). In the past decade, especially in 2018, many materials and devices have been tested for properties related to VLC, such as f c , response time, and transmission data rates, which are listed and analyzed here to get an updated overall picture. The f −3 dB for the latest blue LED and color converter can reach up to 1485 and 470 MHz, respectively, which are great improvements from <5 MHz for conventional white LEDs. Among the new PDs, the largest characterized f c is 4.2 MHz. Moreover, the smallest response time of these PDs is 0.95 ns, which is promising to have f c of hundreds of megahertz. The limitation in the field of view when the active area is reduced to enlarge f c of the PD can be partially overcome with novel fluorescent antenna, whose f c is more than 40 MHz. These increments in the f c or f −3 dB of hardware not only enlarge the channel capacity of the VLC but also facilitate the channel impulse response measurement, and the system becomes more susceptible to changes in the environment. These advances will shed light on the future development of the VLC with faster speed, more portable devices, and more applications for the Internet of Things.INDEX TERMS Optical wireless communication, physical layer, transceiver, micro-LED, aggregationinduced emission, perovskite, quantum dot, channel modeling.

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“…The modulation bandwidth of an LED chip is limited by the resistance–capacitance (RC) time constant and carrier spontaneous emission rate [3]. Therefore, the methods to increase the modulation bandwidth mainly include decreasing the RC time constant [4,5,6] and the carrier lifetime [7,8]. Many studies have shown that the wavelength-sized cavity can change the local density of optical states (LDOS) and increase the spontaneous emission rate [9].…”

Section: Introductionmentioning

confidence: 99%

“…Nanostructures, such as resonant cavities, surface plasmon, and photonic crystals, can affect the Purcell factor, thereby increasing the spontaneous emission rate of carrier and the modulation bandwidth. Although there are many literatures studying photonic crystal structure to improve the modulation bandwidth of common LED [7,11,12], the literature about flip-chip LEDs with photonic crystals on the bottom is still rarely explored.…”

Section: Introductionmentioning

confidence: 99%

Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

et al. 2019

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In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.

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High-Speed Visible Light Communication Using GaN-Based Light-emitting Diodes With Photonic Crystals

Cited by 27 publications

References 24 publications

Characteristics of Micro‐Size Light‐Emitting Diode for Illumination and Visible Light Communication

Characteristics of Micro‐Size Light‐Emitting Diode for Illumination and Visible Light Communication

Recent Advances in the Hardware of Visible Light Communication

Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

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