High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

Андреев, И. А.; Serebrennikova, O. Yu.; Sokolovskiĭ, G. S.; Dudelev, V. V.; Ilynskaya, N. D.; Konovalov, G. G.; Kunitsyna, E. V.; Yakovlev, Yu. P.

doi:10.1134/s1063782613080046

Cited by 17 publications

(5 citation statements)

References 9 publications

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“…For different SMF-LS fiber lengths, the maximum output power varied slightly, but the mode-locking threshold changed significantly, this will be shown in the discussion section. Train of mode-locked pulses was registered with PD24-005-HS (IBSG Co., Ltd., Saint-Petersburg, Russia) 44 photodiode with a bandwidth of 5 GHz, together with 1 GHz digital oscilloscope Wavesurfer104MXs-B (Teledyne LeCroy GmbH, Heidelberg, Germany) and high-speed oscilloscope MSOV334A (Keysight Technologies Ltd, Santa Rosa, USA) with a bandwidth of 33 GHz. The radio-frequency spectra were measured by means of an FSL (Rhode & Schwartz, Munich, Germany) spectrum analyzer.…”

Section: Methodsmentioning

confidence: 99%

Generation of multi-solitons and noise-like pulses in a high-powered thulium-doped all-fiber ring oscillator

Voropaev

Donodin

Voronets

et al. 2019

Sci Rep

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We report a study on the switching of the generation regimes in a high-powered thulium-doped all-fiber ring oscillator that is passively mode-locked with nonlinear polarization evolution technique with different pumping rates and cavity dispersion values. In one experimental setup, switching was observed between the noise-like pulse and the multi-soliton (in the forms of soliton bunches and soliton rain) regimes by the adjustment of the intracavity polarization controllers. We attributed this to the crucial influence of the nonlinear polarization evolution strength determined by such key parameters as saturation (over-rotation) power, linear phase bias, and nonlinear losses on the pulse evolution and stability. So the soliton collapse effect (leading to noise-like pulse generation) or the peak power clamping effect (generating a bunch of loosely-bound solitons) may determine pulse dynamics. Both the spectrum bandwidth and coherence time were studied for noise-like pulses by varying the cavity length and pump power, as well as the duration of solitons composing bunches. As a result, both noise-like pulses (with spectrum as broad as 32 nm bandwidth) and multi-soliton formations (with individual pulse-widths ranging from 748 to 1273 fs with a cavity length increase from 12 to 53 m) with up to 730 mW average power were generated at a wavelength of around 1.9 μm. The results are important for the realization of the broadband and smooth supercontinuum which can be used as a source for mid-IR vibrational spectroscopy of gas samples for breath analysis and environmental sensing.

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Section: Methodsmentioning

confidence: 99%

Generation of multi-solitons and noise-like pulses in a high-powered thulium-doped all-fiber ring oscillator

Voropaev

Donodin

Voronets

et al. 2019

Sci Rep

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“…Developing high-speed photodetectors (PDs) operating at room temperature in the extended-SWIR (e-SWIR) spectral range is critical to implement a variety of applications including high-resolution active light detection and ranging (LIDAR), time-resolved spectroscopy, environmental monitoring of greenhouse gases, medical optical tomography, and new generation optical communication systems. − While group IV detectors operating at 2 μm provide a bandwidth reaching 30 GHz, , the state-of-the-art photodetectors operating above 2.3 μm with a bandwidth above 5 GHz consist exclusively of In-rich InGaAs on InP, − InGaAs/GaAsSb on InP, − and GaInAsSb on GaSb. , These devices face cost and scalability challenges and exhibit a low bandwidth above 2.3 μm that does not exceed 6 GHz . Establishing silicon-integrated high-speed detectors is an attractive paradigm for large-scale fabrication, cost effectiveness, and compatibility with complementary metal-oxide semiconductor (CMOS) processing .…”

Section: Introductionmentioning

confidence: 99%

“…1−3 While group IV detectors operating at 2 μm provide a bandwidth reaching 30 GHz, 4,5 the state-of-the-art photodetectors operating above 2.3 μm with a bandwidth above 5 GHz consist exclusively of In-rich InGaAs on InP, 6−8 InGaAs/GaAsSb on InP, 9−11 and GaInAsSb on GaSb. 1,12 These devices face cost and scalability challenges and exhibit a low bandwidth above 2.3 μm that does not exceed 6 GHz. 1 Establishing silicon-integrated high-speed detectors is an attractive paradigm for large-scale fabrication, cost effectiveness, and compatibility with complementary metal-oxide semiconductor (CMOS) processing.…”

Section: ■ Introductionmentioning

confidence: 99%

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

et al. 2022

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The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition, artificial intelligence, and medical imaging. However, developing these emerging technologies and their large-scale use depend on the availability of high-speed, low-noise, and cost-effective photodetectors. With this perspective, here we demonstrate GeSn photodiodes grown on silicon wafers featuring a high broadband operation covering the extended-SWIR range with a peak responsivity of 0.3 A/W at room temperature. These GeSn devices exhibit a high bandwidth reaching 7.5 GHz at 5 V bias with a 2.6 μm cutoff wavelength, and their integration in ultrafast time-resolved spectroscopy applications is demonstrated. In addition to enabling time-resolved electroluminescence at 2.3 μm, the high-speed operation of GeSn detectors was also exploited in the diagnostics of ultrashort pulses of a supercontinuum laser with a temporal resolution in the picosecond range at 2.5 μm. Establishing these capabilities highlights the potential of manufacturable GeSn photodiodes for silicon-integrated high-speed extended-SWIR applications.

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“…[1][2][3] State-of-the-art photodetectors in this wavelength range with a bandwidth above 5 GHz consist exclusively of In-rich InGaAs on InP, [4][5][6] InGaAs/GaAsSb on InP, [7][8][9] and GaInAsSb on GaSb. 1,10 These devices face cost and scalability challenges and exhibit low bandwidth above 2.3 µm that does not exceed 6 GHz. 1 Establishing silicon-integrated high-speed detectors is an attractive paradigm for large-scale fabrication, cost effectiveness, and compatibility with complementary metal-oxide semiconductor (CMOS) processing.…”

mentioning

confidence: 99%

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

Atalla¹,

Assali²,

Koelling³

et al. 2021

Preprint

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The availability of high-frequency pulsed emitters in the 2-2.5 µm wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition, artificial intelligence, and medical imaging. However, developing these emerging technologies and their large-scale use depend on the availability of high-speed, low-noise, and cost-effective photodetectors. With this perspective, here we demonstrate GeSn photodiodes grown on silicon wafers featuring a high broadband operation covering the extended-SWIR range with a peak responsivity of 0.3 A/W at room temperature. These GeSn devices exhibit a high bandwidth reaching 7.5 GHz at 5 V bias with a 2.6 µm cutoff wavelength, and their integration in ultrafast time-resolved spectroscopy applications is demonstrated. In addition to enabling time-resolved electro-luminescence at 2.3 µm, the high-speed operation of GeSn detectors was also exploited in the diagnostics of ultra-short pulses of a supercontinuum laser with a temporal resolution in the picosecond range at 2.5 µm. Establishing these capabilities highlights the potential of manufacturable GeSn photodiodes for silicon-integrated high-speed extended-SWIR applications.

show abstract

High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

Cited by 17 publications

References 9 publications

Generation of multi-solitons and noise-like pulses in a high-powered thulium-doped all-fiber ring oscillator

Generation of multi-solitons and noise-like pulses in a high-powered thulium-doped all-fiber ring oscillator

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

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