High speed normally-off GaAs MESFET integrated circuit

Katano, F.; Furutsuka, Takashi; Higashisaka, A.

doi:10.1049/el:19810167

Cited by 11 publications

(1 citation statement)

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“…Negative transconductance dispersion and 'hole' like peaks in CDLTS spectra have been attributed to presence of surface states in the ungated regions in devices such as MESFET's [3,4,7,14]. During the last decade, these unfavourable effects have been considerably lowered by reducing the interelectrode spacings [16] and lowering source and drain series resistances [17]. In addition, the incorporation of self aligned recessed gate structure with n + GaAs contact layer under the source and the drain have effectively eliminated the effect of surface states on transconductance dispersion.…”

Section: Discussionmentioning

confidence: 99%

The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT

Balakrishnan¹,

Kumar²,

Ghosh³

2005

Semicond. Sci. Technol.

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Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic(CDLTS) studies of an AlGaAs/InGaAs pseudomorphic HEMT were carried out. The experimental results show the presence of defect states at the AlGaAs/InGaAs hetero-interface. A mobility degradation model was developed to explain the low frequency negative transconductance dispersion as well as the apparent 'hole' like peaks observed in the CDLTS spectra. This model incorporates a time dependent change in 2DEG mobility due to ionised impurity scattering by the remaining charge states at the adjoining AlGaAs/InGaAs hetero-interface.

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