High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology

Csutak, S.M.; Schaub, J.D.; Wu, Wei; Shimer, R.; Campbell, Joe C.

doi:10.1109/jlt.2002.802221

Cited by 36 publications

(21 citation statements)

References 12 publications

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“…Increasing the maximum bit rate is usually done by elimination of the bulk current component from the overall photodiode response. This increases the bit rates up to 700 Mb/s at the cost of nonstandard CMOS processes and responsivity (e.g., [7], [9], [8]) or at the cost of only responsivity [12], [13]. Note that the exchange of bandwidth and responsivity is also present when going from a p /n-well/psubstrate photodiode to a p /n-well photodiode.…”

Section: A Compensating the Intrinsic Bandwidthmentioning

confidence: 99%

“…In [7], a buried oxide layer is added to standard CMOS to prevent charge from slowly diffusing back to the junction. A similar solution is presented in [8] where the optical receiver is implemented in SOI. Other solutions include the generation of a very thick depletion layer by applying high voltages or by the introduction of very lightly doped layers [6], [9]- [11].…”

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confidence: 99%

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A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication

Radovanovic

Annema

Nauta

2005

IEEE J. Solid-State Circuits

108

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Abstract-This paper presents a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18-m CMOS technology. A data rate of 3 Gb/s at BER 10 11 was achieved for = 850 nm with 25-W peak-peak optical power. This data rate is more than four times than that of current state-of-the-art optical detectors in standard CMOS reported so far. High-speed operation is achieved without reducing circuit responsivity by using an inherently robust analog equalizer that compensates (in gain and phase) for the photodiode roll-off over more than three decades. The presented solution is applicable to various photodiode structures, wavelengths, and CMOS generations.

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Section: A Compensating the Intrinsic Bandwidthmentioning

confidence: 99%

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confidence: 99%

A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication

Radovanovic

Annema

Nauta

2005

IEEE J. Solid-State Circuits

108

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“…A substantial amount of research on producing highperformance CMOS receivers has been undertaken, motivated by the attractive aspects of Si CMOS technology: established high-volume and low-cost manufacturing, low power consumption, high reliability, and continually-increasing speed. Monolithically integrated Si-receivers have been demonstrated to operate at bit rates as high as 11 Gb/s but have required photodiode bias voltages of more than 15 V [1], [2]. The poor optical absorption of Si at λ = 850 nm imposes a fundamental bandwidth/responsivity tradeoff for integrated Si detectors, spurring interest in Geon-Si photodiodes.…”

Section: Introductionmentioning

confidence: 99%

A 19-Gb/s, 1.8-V Optical Receiver Front-End Comprised of a Ge-on-SOI Photodiode and a CMOS Transimpedance Amplifier

Schow

Schares²,

Koester³

et al. 2006

2006 European Conference on Optical Communications

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We report the fastest (19 Gb/s) and lowest voltage (1.8 V) all-silicon-based optical receiver front end, consisting of a 0.13-µm CMOS transimpedance amplifier and a planar Ge-on-SOI photodiode that is suitable for future monolithic integration. IntroductionMonolithically integrated silicon optical receivers have the potential to enable many cost-sensitive applications that require high data rate transmission. A substantial amount of research on producing highperformance CMOS receivers has been undertaken, motivated by the attractive aspects of Si CMOS technology: established high-volume and low-cost manufacturing, low power consumption, high reliability, and continually-increasing speed. Monolithically integrated Si-receivers have been demonstrated to operate at bit rates as high as 11 Gb/s but have required photodiode bias voltages of more than 15 V [1],[2]. The poor optical absorption of Si at λ = 850 nm imposes a fundamental bandwidth/responsivity tradeoff for integrated Si detectors, spurring interest in Geon-Si photodiodes. Ge detectors offer extremely high absorption (50x higher than Si at λ = 850 nm), high mobility, and potential compatibility with CMOS processing. Recently, Ge-on-Si detectors with 39-GHz bandwidth [3] and Ge-on-silicon-on-insulator (SOI) detectors with 13.2 GHz bandwidth-efficiency product at λ = 850 nm [4] at low voltages have been reported. Finally, unlike Si, Ge is sensitive to 1.3-µm and even 1.55-µm radiation [5], opening the possibility of producing monolithically integrated receivers capable of detection over a broad spectral range in the near infrared. In this paper, we report on the fastest and lowestvoltage all-silicon-based optical receiver front-end (RFE) produced to date. The RFE combines a highbandwidth, low-voltage, planar Ge-on-SOI detector with a broadband CMOS TIA. The RFE operates with a bias across the photodiode and a TIA supply voltage of 1.8 V and achieves a sensitivity of -10.3 dBm at 19 Gb/s (BER=10 -12 , λ = 850 nm). This

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“…The receiver circuit is not expected to limit the development of silicon based optical interconnects since researchers have shown operation of Si-based receivers in the GHz range [19,20].…”

Section: Resultsmentioning

confidence: 99%

Avalanche breakdown in silicon devices for contactless logic testing and optical interconnect

Sayıl

2008

Analog Integr Circ Sig Process

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A silicon p-n junction that is biased in avalanche breakdown mode emits visible light. Although the efficiency of such silicon emitters is poor, their ability to modulate at GHz frequencies make them a good choice for many applications including optical interconnect and optical contactless logic testing. Results demonstrate the feasibility of an all silicon optical interconnect system and an all silicon contactless testing methodology using the silicon light emitter and standard silicon detectors. The development of truly efficient silicon light emitting would enable many new applications.

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High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology

Cited by 36 publications

References 12 publications

A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication

A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication

A 19-Gb/s, 1.8-V Optical Receiver Front-End Comprised of a Ge-on-SOI Photodiode and a CMOS Transimpedance Amplifier

Avalanche breakdown in silicon devices for contactless logic testing and optical interconnect

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