2013
DOI: 10.1016/j.nima.2013.03.002
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High speed low power FEE for silicon detectors in nuclear physics applications

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Cited by 4 publications
(1 citation statement)
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“…The research suggests that technologies above 130 nm are suitable in terms of noise [5][6][7] whilst technologies below 100 nm are under investigation [8,9]. In the years to come, novel circuit techniques will be required for low power, low voltage, low noise, high speed and high linearity.…”
Section: Introductionmentioning
confidence: 99%
“…The research suggests that technologies above 130 nm are suitable in terms of noise [5][6][7] whilst technologies below 100 nm are under investigation [8,9]. In the years to come, novel circuit techniques will be required for low power, low voltage, low noise, high speed and high linearity.…”
Section: Introductionmentioning
confidence: 99%