High-Speed, Low-Current-Density 850 nm VCSELs

Westbergh, Petter; Gustavsson, Johan S.; Haglund, Åsa; Sköld, Maria; Joel, A.; Larsson, Anders

doi:10.1109/jstqe.2009.2015465

Cited by 132 publications

(95 citation statements)

References 26 publications

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“…Следует отметить, что плотность состояний в валентной зоне напряженной квантовой ямы InGaAs при достижении содержания In ∼ 10% практически перестает меняться. В работе [46] было показано, что применение квантовых ям In 0.07 Ga 0.93 As/AlGaAs позволяет повысить частоту эффективной модуляции ВИЛ спектрального диапазона 850 nm с 16.5 до 20 GHz, однако низкая (∼ 10 GHz) паразитная частота отсечки реализованных приборов ограничивала скорость безошибочной модуляции данных на уровне 32 Gbit/s [10].…”

Section: дифференциальное усиление активной областиunclassified

“…При выборе конструкции активной области на основе КЯ InGaAs следует учитывать несколько нюансов. С одной стороны, применение более глубоких квантовых ям (с высоким содержанием In) обусловливает необходимость уменьшения их толщины для сохранения требуемой длины волны излучения активной области при одновре-менном увеличении общего количества ям и уменьшения толщины барьерных слоев между ними для обеспечения высокого продольного фактора оптического ограничения и требуемого модального усиле-ния [46]. С другой стороны, необходимо принимать во внимание, что уменьшение толщины барьерных слоев между квантовыми ямами со-пряжено не только с вероятностью формирования связанных состояний, но и с возможным образованием ростовых дефектов из-за накопления структурных напряжений.…”

Section: дифференциальное усиление активной областиunclassified

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Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Section: дифференциальное усиление активной областиunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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“…This conventional approach to higher repetition frequencies can lead to accelerated device degradation caused by the very high but necessary drive currents [Wes09]. In this work a monolithically integrated concept was investigated to overcome the need for separate modulators at highest speeds while maintaining the established VCSEL technology.…”

Section: Chaptermentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…Based on this platform, we propose a system of two laterally coupled cavities, which shows the breaking of parity-time symmetry in vertical cavity structures. The vertical cavity is a rich platform for fundamental physics studies of light-matter interactions such as cavity quantum electrodynamics (QED) 1,2 and cavity polaritons, 3,4 as well as various applications including vertical-cavity surface-emitting lasers (VCSELs), [5][6][7] single-photon light sources, 8 and Si-integrated on-chip lasers. 9 Recently, it has been reported that the dispersion of a vertical cavity, i.e., the relationship between the frequency x and wavevector k of a cavity mode, can be engineered by using the high-index-contrast grating (HCG) as reflector and designing the dispersion of the HCG.…”

mentioning

confidence: 99%

Vertical-cavity in-plane heterostructures: Physics and applications

2015

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We show that the in-plane heterostructures realized in vertical cavities with high contrast grating (HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined by the well width and barrier height. We show that in vertical-cavity in-plane heterostructures, anisotropic dispersion curvatures plays a key role as well, leading to exotic effects such as a photonic well with conduction band like well and a valence band like barrier. We investigate three examples to discuss the rich potential of this heterostructure as a platform for various physics studies and propose a system of two laterally coupled cavities which shows the breaking of parity-time symmetry as an example.

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High-Speed, Low-Current-Density 850 nm VCSELs

Cited by 132 publications

References 26 publications

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Design and Realization of Novel GaAs Based Laser Concepts

Vertical-cavity in-plane heterostructures: Physics and applications

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