High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers

Fabrication and Characterization of Self-Aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

“…As shown in Figure 10 (a), the DHBT with an effective emitter area of 0.65 × 8.65 µm 2 showed f T and f max of 260 and 485 GHz, respectively, at a collector current density of 302 kA/cm 2 . Figure 10 (b) compares the f T and f max of our InGaAsSb DHBTs with those taken from literatures [1][2][3][4][5][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. The DHBT with 0.65 × 8.65 µm 2 emitter area has delivered a comparable performance among InP-base HBTs.…”

Selective area growth of InAs on InP with dielectric mask

“…1,2 Low resistance ohmic contacts are important for high frequency applications of InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors. In these heterostructure devices and circuits, it is necessary to make ohmic contacts to the wide bandgap InAlAs through InGaAs and ultimately the narrow bandgap InAs, 3 especially for small devices where most of the surface area of the devices and circuits are covered with dielectrics. [4][5][6] Woodall et al first proposed the use of n-InAs as the low resistance ohmic contact to n-GaAs for the reasons that InAs has narrow band-gap and its surfaces Fermi level pinning occurs in the conduction band.…”

“…8 In addition to study of nonalloyed ohmic contact using compositionally graded InGaAs layers on GaAs substrates, InAs as cap layer of InP-based devices has gained attention due to the high-speed characteristics of the InP based system. 3,9 In this paper, selective area crystal growth of InAs on a dielectric [benzocyclobutene (BCB) polymer] covered InP(100), hereafter known as BCB/InP, was carried out by molecular beam epitaxy (MBE) in respect to previous studies of InAs emitter contact layers of InP material system. 3,10 Research was performed to compare InAs directly grown on InP substrate and InAs on BCB/InP.…”

“…3,9 In this paper, selective area crystal growth of InAs on a dielectric [benzocyclobutene (BCB) polymer] covered InP(100), hereafter known as BCB/InP, was carried out by molecular beam epitaxy (MBE) in respect to previous studies of InAs emitter contact layers of InP material system. 3,10 Research was performed to compare InAs directly grown on InP substrate and InAs on BCB/InP. The crystal quality of InAs was characterized by scanning electron microscope (SEM) and x-ray diffraction (XRD).…”

Proton irradiation effects on Sb-based heterojunction bipolar transistors

“…[1][2][3] These characteristics are due to their smaller base band gap and favorable type-I emitter-base ͑E-B͒ junction and type-II base-collector ͑B-C͒ junction. The higher valence band offset at the In 0.52 Al 0.48 As/ In 0.39 Ga 0.61 As 0.77 Sb 0.23 E / B junction prevents the injection of holes from the base to the In 0.52 Al 0.48 As emitter, leading to higher electron injection efficiency.…”